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Consider the recombination process via bulk traps in a forward biased pn homojunction diode. The maximum recombination rate is Umax. If the electron and the hole capture cross-section are equal, which one of the following is False?
- a)With all other parameters unchanged,Umax decreases if the intrinsic carrier density is reduced.
- b)With all other parameters unchanged, Umax increases if the thermal velocity of the carriers increases.
- c)Umax occurs at the edges of the depletion region in the device.
- d)Umax depends exponentially on the applied bias.
Correct answer is option 'C'. Can you explain this answer?
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Consider the recombination process via bulk traps in a forward biased ...
Understanding Recombination in pn Homojunction Diodes
In the context of a forward-biased pn homojunction diode, the recombination process via bulk traps is crucial for understanding the diode's behavior. Let's analyze why option 'C' is false.
Recombination Rate (Umax)
- Umax represents the maximum recombination rate, influenced by carrier densities and trapping mechanisms.
- It is dependent on factors such as carrier concentration, thermal velocity, and the presence of traps.
Factors Affecting Umax
- **Option A: Reduced Intrinsic Carrier Density**
- If the intrinsic carrier density is reduced, Umax decreases. This is because fewer carriers are available to recombine, leading to a lower recombination rate.
- **Option B: Increased Thermal Velocity**
- If the thermal velocity of carriers increases, Umax increases. Higher velocities enhance the likelihood of collisions and recombination events.
- **Option C: Location of Umax**
- Umax does not necessarily occur at the edges of the depletion region. Instead, it typically occurs within the bulk of the material where there are sufficient carriers and traps available. Thus, this statement is false.
- **Option D: Exponential Dependence on Applied Bias**
- Umax indeed depends exponentially on the applied bias due to increased carrier injection and enhanced recombination rates under higher biases.
Conclusion
In summary, option 'C' is false because Umax does not occur specifically at the edges of the depletion region; rather, it can occur throughout the bulk where conditions are favorable for recombination. Understanding these dynamics is essential for optimizing diode performance in electronic applications.
In the context of a forward-biased pn homojunction diode, the recombination process via bulk traps is crucial for understanding the diode's behavior. Let's analyze why option 'C' is false.
Recombination Rate (Umax)
- Umax represents the maximum recombination rate, influenced by carrier densities and trapping mechanisms.
- It is dependent on factors such as carrier concentration, thermal velocity, and the presence of traps.
Factors Affecting Umax
- **Option A: Reduced Intrinsic Carrier Density**
- If the intrinsic carrier density is reduced, Umax decreases. This is because fewer carriers are available to recombine, leading to a lower recombination rate.
- **Option B: Increased Thermal Velocity**
- If the thermal velocity of carriers increases, Umax increases. Higher velocities enhance the likelihood of collisions and recombination events.
- **Option C: Location of Umax**
- Umax does not necessarily occur at the edges of the depletion region. Instead, it typically occurs within the bulk of the material where there are sufficient carriers and traps available. Thus, this statement is false.
- **Option D: Exponential Dependence on Applied Bias**
- Umax indeed depends exponentially on the applied bias due to increased carrier injection and enhanced recombination rates under higher biases.
Conclusion
In summary, option 'C' is false because Umax does not occur specifically at the edges of the depletion region; rather, it can occur throughout the bulk where conditions are favorable for recombination. Understanding these dynamics is essential for optimizing diode performance in electronic applications.
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Consider the recombination process via bulk traps in a forward biased pn homojunction diode. The maximum recombination rate is Umax. If the electron and the hole capture cross-section are equal, which one of the following is False?a)With all other parameters unchanged,Umax decreases if the intrinsic carrier density is reduced.b)With all other parameters unchanged, Umax increases if the thermal velocity of the carriers increases.c)Umax occurs at the edges of the depletion region in the device.d)Umax depends exponentially on the applied bias.Correct answer is option 'C'. Can you explain this answer?
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Consider the recombination process via bulk traps in a forward biased pn homojunction diode. The maximum recombination rate is Umax. If the electron and the hole capture cross-section are equal, which one of the following is False?a)With all other parameters unchanged,Umax decreases if the intrinsic carrier density is reduced.b)With all other parameters unchanged, Umax increases if the thermal velocity of the carriers increases.c)Umax occurs at the edges of the depletion region in the device.d)Umax depends exponentially on the applied bias.Correct answer is option 'C'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about Consider the recombination process via bulk traps in a forward biased pn homojunction diode. The maximum recombination rate is Umax. If the electron and the hole capture cross-section are equal, which one of the following is False?a)With all other parameters unchanged,Umax decreases if the intrinsic carrier density is reduced.b)With all other parameters unchanged, Umax increases if the thermal velocity of the carriers increases.c)Umax occurs at the edges of the depletion region in the device.d)Umax depends exponentially on the applied bias.Correct answer is option 'C'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider the recombination process via bulk traps in a forward biased pn homojunction diode. The maximum recombination rate is Umax. If the electron and the hole capture cross-section are equal, which one of the following is False?a)With all other parameters unchanged,Umax decreases if the intrinsic carrier density is reduced.b)With all other parameters unchanged, Umax increases if the thermal velocity of the carriers increases.c)Umax occurs at the edges of the depletion region in the device.d)Umax depends exponentially on the applied bias.Correct answer is option 'C'. Can you explain this answer?.
Consider the recombination process via bulk traps in a forward biased pn homojunction diode. The maximum recombination rate is Umax. If the electron and the hole capture cross-section are equal, which one of the following is False?a)With all other parameters unchanged,Umax decreases if the intrinsic carrier density is reduced.b)With all other parameters unchanged, Umax increases if the thermal velocity of the carriers increases.c)Umax occurs at the edges of the depletion region in the device.d)Umax depends exponentially on the applied bias.Correct answer is option 'C'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about Consider the recombination process via bulk traps in a forward biased pn homojunction diode. The maximum recombination rate is Umax. If the electron and the hole capture cross-section are equal, which one of the following is False?a)With all other parameters unchanged,Umax decreases if the intrinsic carrier density is reduced.b)With all other parameters unchanged, Umax increases if the thermal velocity of the carriers increases.c)Umax occurs at the edges of the depletion region in the device.d)Umax depends exponentially on the applied bias.Correct answer is option 'C'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider the recombination process via bulk traps in a forward biased pn homojunction diode. The maximum recombination rate is Umax. If the electron and the hole capture cross-section are equal, which one of the following is False?a)With all other parameters unchanged,Umax decreases if the intrinsic carrier density is reduced.b)With all other parameters unchanged, Umax increases if the thermal velocity of the carriers increases.c)Umax occurs at the edges of the depletion region in the device.d)Umax depends exponentially on the applied bias.Correct answer is option 'C'. Can you explain this answer?.
Solutions for Consider the recombination process via bulk traps in a forward biased pn homojunction diode. The maximum recombination rate is Umax. If the electron and the hole capture cross-section are equal, which one of the following is False?a)With all other parameters unchanged,Umax decreases if the intrinsic carrier density is reduced.b)With all other parameters unchanged, Umax increases if the thermal velocity of the carriers increases.c)Umax occurs at the edges of the depletion region in the device.d)Umax depends exponentially on the applied bias.Correct answer is option 'C'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electronics and Communication Engineering (ECE).
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Consider the recombination process via bulk traps in a forward biased pn homojunction diode. The maximum recombination rate is Umax. If the electron and the hole capture cross-section are equal, which one of the following is False?a)With all other parameters unchanged,Umax decreases if the intrinsic carrier density is reduced.b)With all other parameters unchanged, Umax increases if the thermal velocity of the carriers increases.c)Umax occurs at the edges of the depletion region in the device.d)Umax depends exponentially on the applied bias.Correct answer is option 'C'. Can you explain this answer?, a detailed solution for Consider the recombination process via bulk traps in a forward biased pn homojunction diode. The maximum recombination rate is Umax. If the electron and the hole capture cross-section are equal, which one of the following is False?a)With all other parameters unchanged,Umax decreases if the intrinsic carrier density is reduced.b)With all other parameters unchanged, Umax increases if the thermal velocity of the carriers increases.c)Umax occurs at the edges of the depletion region in the device.d)Umax depends exponentially on the applied bias.Correct answer is option 'C'. Can you explain this answer? has been provided alongside types of Consider the recombination process via bulk traps in a forward biased pn homojunction diode. The maximum recombination rate is Umax. If the electron and the hole capture cross-section are equal, which one of the following is False?a)With all other parameters unchanged,Umax decreases if the intrinsic carrier density is reduced.b)With all other parameters unchanged, Umax increases if the thermal velocity of the carriers increases.c)Umax occurs at the edges of the depletion region in the device.d)Umax depends exponentially on the applied bias.Correct answer is option 'C'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice Consider the recombination process via bulk traps in a forward biased pn homojunction diode. The maximum recombination rate is Umax. If the electron and the hole capture cross-section are equal, which one of the following is False?a)With all other parameters unchanged,Umax decreases if the intrinsic carrier density is reduced.b)With all other parameters unchanged, Umax increases if the thermal velocity of the carriers increases.c)Umax occurs at the edges of the depletion region in the device.d)Umax depends exponentially on the applied bias.Correct answer is option 'C'. Can you explain this answer? tests, examples and also practice Electronics and Communication Engineering (ECE) tests.
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