Introduction:
In semiconductor physics, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical and optical properties. The process of adding impurities to a semiconductor is called doping, and the impurities are called dopants.

P-type Semiconductor:
A p-type semiconductor is formed by doping a pure semiconductor with an impurity containing fewer valence electrons than the semiconductor. The impurity atoms, which are called acceptors, create holes in the valence band of the semiconductor, which can move freely through the material.

Doping Group 14 Element:
Group 14 elements have four valence electrons, which makes them ideal for doping as they can either donate or accept electrons to or from the semiconductor. To convert a Group 14 element into a p-type semiconductor, it needs to be doped with an impurity that has fewer valence electrons than it.

Doping with B:
Boron is an impurity with three valence electrons, which makes it a good candidate for doping a Group 14 element. When boron is introduced into the semiconductor lattice, it creates holes in the valence band, which can move freely through the material. This makes the semiconductor p-type.

Doping with Other Impurities:
Other impurities, such as phosphorus or arsenic, have five valence electrons, which makes them good candidates for doping n-type semiconductors. When these impurities are introduced into the semiconductor lattice, they create extra electrons in the conduction band, which can move freely through the material.

Conclusion:
In conclusion, doping a Group 14 element with boron can convert it into a p-type semiconductor by creating holes in the valence band. This process is important in the fabrication of electronic devices such as diodes, transistors, and solar cells.