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Consider the following statements regarding the magnitude of barrier potential of a PN junction:
1. It is independent of temperature
2. It depends on difference between fermi levels on two sides of junction.
3. It depends on forbidden energy gap on two types of semiconductors
4. It depends on impurity concentration in P and N type semiconductors
Which of the statements given above is/are correct?
1. It is independent of temperature
2. It depends on difference between fermi levels on two sides of junction.
3. It depends on forbidden energy gap on two types of semiconductors
4. It depends on impurity concentration in P and N type semiconductors
Which of the statements given above is/are correct?
- a)1, 2 and 3
- b)1 and 3
- c)1 and 2
- d)2, 3 and 4
Correct answer is option 'D'. Can you explain this answer?
Most Upvoted Answer
Consider the following statements regarding the magnitude of barrier p...
Understanding Barrier Potential in PN Junctions
The barrier potential of a PN junction is a critical concept in semiconductor physics. Let's analyze the correctness of the given statements.
1. Independence from Temperature
- Incorrect: The barrier potential does vary with temperature. As temperature increases, the intrinsic carrier concentration in semiconductors also increases, which can affect the barrier height.
2. Fermi Level Difference
- Correct: The barrier potential is influenced by the difference in Fermi levels between the P-type and N-type semiconductors. This difference is what drives the formation of the electric field at the junction.
3. Forbidden Energy Gap
- Correct: The barrier potential does depend on the forbidden energy gap (bandgap) of the semiconductor materials. Different semiconductor materials have different bandgaps, which affect the energy required for charge carriers to move across the junction.
4. Impurity Concentration
- Correct: The barrier potential is also influenced by the impurity concentration in both P-type and N-type semiconductors. Higher doping levels typically result in a lower barrier potential due to increased charge carrier concentration.
Conclusion
Based on the analysis:
- The correct statements are 2, 3, and 4. Hence, the correct answer is option 'D'.
This understanding is crucial for JEE preparation, as it forms the basis for analyzing semiconductor devices and their behavior under various conditions.
The barrier potential of a PN junction is a critical concept in semiconductor physics. Let's analyze the correctness of the given statements.
1. Independence from Temperature
- Incorrect: The barrier potential does vary with temperature. As temperature increases, the intrinsic carrier concentration in semiconductors also increases, which can affect the barrier height.
2. Fermi Level Difference
- Correct: The barrier potential is influenced by the difference in Fermi levels between the P-type and N-type semiconductors. This difference is what drives the formation of the electric field at the junction.
3. Forbidden Energy Gap
- Correct: The barrier potential does depend on the forbidden energy gap (bandgap) of the semiconductor materials. Different semiconductor materials have different bandgaps, which affect the energy required for charge carriers to move across the junction.
4. Impurity Concentration
- Correct: The barrier potential is also influenced by the impurity concentration in both P-type and N-type semiconductors. Higher doping levels typically result in a lower barrier potential due to increased charge carrier concentration.
Conclusion
Based on the analysis:
- The correct statements are 2, 3, and 4. Hence, the correct answer is option 'D'.
This understanding is crucial for JEE preparation, as it forms the basis for analyzing semiconductor devices and their behavior under various conditions.
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Consider the following statements regarding the magnitude of barrier potential of a PN junction:1. It is independent of temperature2. It depends on difference between fermi levels on two sides of junction.3. It depends on forbidden energy gap on two types of semiconductors4. It depends on impurity concentration in P and N type semiconductorsWhich of the statements given above is/are correct?a)1, 2 and 3b)1 and 3c)1 and 2d)2, 3 and 4Correct answer is option 'D'. Can you explain this answer? for JEE 2025 is part of JEE preparation. The Question and answers have been prepared according to the JEE exam syllabus. Information about Consider the following statements regarding the magnitude of barrier potential of a PN junction:1. It is independent of temperature2. It depends on difference between fermi levels on two sides of junction.3. It depends on forbidden energy gap on two types of semiconductors4. It depends on impurity concentration in P and N type semiconductorsWhich of the statements given above is/are correct?a)1, 2 and 3b)1 and 3c)1 and 2d)2, 3 and 4Correct answer is option 'D'. Can you explain this answer? covers all topics & solutions for JEE 2025 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider the following statements regarding the magnitude of barrier potential of a PN junction:1. It is independent of temperature2. It depends on difference between fermi levels on two sides of junction.3. It depends on forbidden energy gap on two types of semiconductors4. It depends on impurity concentration in P and N type semiconductorsWhich of the statements given above is/are correct?a)1, 2 and 3b)1 and 3c)1 and 2d)2, 3 and 4Correct answer is option 'D'. Can you explain this answer?.
Consider the following statements regarding the magnitude of barrier potential of a PN junction:1. It is independent of temperature2. It depends on difference between fermi levels on two sides of junction.3. It depends on forbidden energy gap on two types of semiconductors4. It depends on impurity concentration in P and N type semiconductorsWhich of the statements given above is/are correct?a)1, 2 and 3b)1 and 3c)1 and 2d)2, 3 and 4Correct answer is option 'D'. Can you explain this answer? for JEE 2025 is part of JEE preparation. The Question and answers have been prepared according to the JEE exam syllabus. Information about Consider the following statements regarding the magnitude of barrier potential of a PN junction:1. It is independent of temperature2. It depends on difference between fermi levels on two sides of junction.3. It depends on forbidden energy gap on two types of semiconductors4. It depends on impurity concentration in P and N type semiconductorsWhich of the statements given above is/are correct?a)1, 2 and 3b)1 and 3c)1 and 2d)2, 3 and 4Correct answer is option 'D'. Can you explain this answer? covers all topics & solutions for JEE 2025 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider the following statements regarding the magnitude of barrier potential of a PN junction:1. It is independent of temperature2. It depends on difference between fermi levels on two sides of junction.3. It depends on forbidden energy gap on two types of semiconductors4. It depends on impurity concentration in P and N type semiconductorsWhich of the statements given above is/are correct?a)1, 2 and 3b)1 and 3c)1 and 2d)2, 3 and 4Correct answer is option 'D'. Can you explain this answer?.
Solutions for Consider the following statements regarding the magnitude of barrier potential of a PN junction:1. It is independent of temperature2. It depends on difference between fermi levels on two sides of junction.3. It depends on forbidden energy gap on two types of semiconductors4. It depends on impurity concentration in P and N type semiconductorsWhich of the statements given above is/are correct?a)1, 2 and 3b)1 and 3c)1 and 2d)2, 3 and 4Correct answer is option 'D'. Can you explain this answer? in English & in Hindi are available as part of our courses for JEE.
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Consider the following statements regarding the magnitude of barrier potential of a PN junction:1. It is independent of temperature2. It depends on difference between fermi levels on two sides of junction.3. It depends on forbidden energy gap on two types of semiconductors4. It depends on impurity concentration in P and N type semiconductorsWhich of the statements given above is/are correct?a)1, 2 and 3b)1 and 3c)1 and 2d)2, 3 and 4Correct answer is option 'D'. Can you explain this answer?, a detailed solution for Consider the following statements regarding the magnitude of barrier potential of a PN junction:1. It is independent of temperature2. It depends on difference between fermi levels on two sides of junction.3. It depends on forbidden energy gap on two types of semiconductors4. It depends on impurity concentration in P and N type semiconductorsWhich of the statements given above is/are correct?a)1, 2 and 3b)1 and 3c)1 and 2d)2, 3 and 4Correct answer is option 'D'. Can you explain this answer? has been provided alongside types of Consider the following statements regarding the magnitude of barrier potential of a PN junction:1. It is independent of temperature2. It depends on difference between fermi levels on two sides of junction.3. It depends on forbidden energy gap on two types of semiconductors4. It depends on impurity concentration in P and N type semiconductorsWhich of the statements given above is/are correct?a)1, 2 and 3b)1 and 3c)1 and 2d)2, 3 and 4Correct answer is option 'D'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice Consider the following statements regarding the magnitude of barrier potential of a PN junction:1. It is independent of temperature2. It depends on difference between fermi levels on two sides of junction.3. It depends on forbidden energy gap on two types of semiconductors4. It depends on impurity concentration in P and N type semiconductorsWhich of the statements given above is/are correct?a)1, 2 and 3b)1 and 3c)1 and 2d)2, 3 and 4Correct answer is option 'D'. Can you explain this answer? tests, examples and also practice JEE tests.
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