The current ICBO flows in thea)emitter and base leadsb)collector and b...
ICBO is the collector current with collector junction reverse biased and base open-circuited. ICEO is the collector current with collector junction reverse biased and emitter open-circuited. ICBO is reverse leakage current going from the Collector to the Base. This current is then amplified by β to produce additional Collector current, thus the "1+β" term.
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The current ICBO flows in thea)emitter and base leadsb)collector and b...
The correct answer is option 'B', which states that the current ICBO flows in the collector and base leads. Let's understand why this is the correct answer.
- ICBO stands for Collector-Base Leakage Current. It is the current that flows between the collector and base of a bipolar junction transistor (BJT) when the emitter is open-circuited.
- When the emitter-base junction is forward biased, it allows a large current to flow through the transistor, which is known as the collector current (IC). This current is controlled by the base current (IB) and the transistor's current gain (hFE).
- However, even when the emitter-base junction is reverse biased or open-circuited, there is still a small amount of current that flows between the collector and base. This current is called the collector-base leakage current (ICBO).
- The ICBO is typically very small compared to the forward bias current, but it can still have an impact on the overall performance of the transistor.
- The ICBO flows in the collector and base leads because it represents the leakage current that bypasses the emitter-base junction and directly flows between the collector and base terminals.
- This leakage current can cause issues such as increased power dissipation, reduced signal gain, and temperature rise in the transistor.
- Therefore, it is important to consider the ICBO value when selecting a transistor for a specific application and ensure that it is within acceptable limits.
- By choosing a transistor with a lower ICBO value, the leakage current can be minimized, leading to improved overall performance and reliability of the circuit.
In summary, the correct answer is option 'B' because the collector-base leakage current (ICBO) flows in the collector and base leads of a bipolar junction transistor.