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PIN diode is a photosensitive diode because of _______
- a)large current flow in p and n region
- b)depletion layer increases giving a larger surface area
- c)stronger covalent bonds
- d)low carrier storage
Correct answer is option 'B'. Can you explain this answer?
Verified Answer
PIN diode is a photosensitive diode because of _______a)large current ...
PIN diode is formed by sandwiching intrinsic layer (high resistivity about 0.1 Ω-m) between P-type and N-type semiconductor to create an electric field between them. Due to this large magnitude of the electric field, the electron-hole pair generation will augment up to a large extent and this, in turn, can process even a weak input signal.
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PIN diode is a photosensitive diode because of _______a)large current ...
Introduction:
A PIN diode is a type of diode that is photosensitive, meaning it can generate electric current when exposed to light. The reason behind this characteristic lies in the structure and working principle of the PIN diode.
Structure of a PIN Diode:
A PIN diode is a three-layer semiconductor device consisting of a P-type layer, an Intrinsic or Undoped layer, and an N-type layer. The Intrinsic layer is the key component that makes a PIN diode photosensitive.
Working Principle of a PIN Diode:
When no light is incident on the diode, it behaves like a regular diode, allowing current flow in one direction and blocking it in the reverse direction. However, when light of sufficient energy (wavelength) falls on the diode, it generates electron-hole pairs in the Intrinsic layer.
Depletion Region and Depletion Layer:
The Intrinsic layer in a PIN diode has a wider depletion region compared to a regular diode. The depletion region is an area near the P-N junction where there are no charge carriers (electrons or holes). It is created due to the difference in doping concentrations between the P and N regions.
Increased Surface Area:
When light falls on the PIN diode, the energy of the photons is sufficient to create electron-hole pairs in the Intrinsic layer. These pairs then contribute to the current flow through the diode. The wider depletion region in the Intrinsic layer allows for a larger surface area for light absorption and electron-hole pair generation. This results in a higher photosensitivity of the PIN diode compared to a regular diode.
Conclusion:
In conclusion, the PIN diode is photosensitive because of the larger surface area provided by the wider depletion region in the Intrinsic layer. This allows for efficient absorption of light and generation of electron-hole pairs, resulting in a larger current flow when exposed to light.
A PIN diode is a type of diode that is photosensitive, meaning it can generate electric current when exposed to light. The reason behind this characteristic lies in the structure and working principle of the PIN diode.
Structure of a PIN Diode:
A PIN diode is a three-layer semiconductor device consisting of a P-type layer, an Intrinsic or Undoped layer, and an N-type layer. The Intrinsic layer is the key component that makes a PIN diode photosensitive.
Working Principle of a PIN Diode:
When no light is incident on the diode, it behaves like a regular diode, allowing current flow in one direction and blocking it in the reverse direction. However, when light of sufficient energy (wavelength) falls on the diode, it generates electron-hole pairs in the Intrinsic layer.
Depletion Region and Depletion Layer:
The Intrinsic layer in a PIN diode has a wider depletion region compared to a regular diode. The depletion region is an area near the P-N junction where there are no charge carriers (electrons or holes). It is created due to the difference in doping concentrations between the P and N regions.
Increased Surface Area:
When light falls on the PIN diode, the energy of the photons is sufficient to create electron-hole pairs in the Intrinsic layer. These pairs then contribute to the current flow through the diode. The wider depletion region in the Intrinsic layer allows for a larger surface area for light absorption and electron-hole pair generation. This results in a higher photosensitivity of the PIN diode compared to a regular diode.
Conclusion:
In conclusion, the PIN diode is photosensitive because of the larger surface area provided by the wider depletion region in the Intrinsic layer. This allows for efficient absorption of light and generation of electron-hole pairs, resulting in a larger current flow when exposed to light.
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Community Answer
PIN diode is a photosensitive diode because of _______a)large current ...
PIN diode having a intrinsic layer between Heavily doped P and N layer. intrinsic material have holes and electrons in equal quantity hence charge is neutral act as depletion layer where immovable charges are present hence depletion area is increase in PIN diode.
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PIN diode is a photosensitive diode because of _______a)large current flow in p and n regionb)depletion layer increases giving a larger surface areac)stronger covalent bondsd)low carrier storageCorrect answer is option 'B'. Can you explain this answer? for Electrical Engineering (EE) 2025 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about PIN diode is a photosensitive diode because of _______a)large current flow in p and n regionb)depletion layer increases giving a larger surface areac)stronger covalent bondsd)low carrier storageCorrect answer is option 'B'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2025 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for PIN diode is a photosensitive diode because of _______a)large current flow in p and n regionb)depletion layer increases giving a larger surface areac)stronger covalent bondsd)low carrier storageCorrect answer is option 'B'. Can you explain this answer?.
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