Consider an ideal PN junction diode with cross-section dimension of 10...
Calculation of Forward Current in an Ideal PN Junction Diode
Given Information
- Cross-sectional area of diode: 10um x 10um
- Reverse-saturation current density: 0.1A/m2
- Forward bias voltage: 0.5V
- Thermal energy: 25meV
Calculation
Firstly, we need to calculate the current density under forward bias voltage. For an ideal PN junction diode, the current density can be calculated using the following equation:
where J(V) is the current density, J0 is the reverse saturation current density, q is the charge of an electron (1.6 x 10-19 C), k is the Boltzmann constant (1.38 x 10-23 J/K), T is the absolute temperature (assumed to be 300K), and V is the applied voltage.
Substituting the given values, we get:
Solving this equation, we get the current density under forward bias voltage to be 1.03 x 103 A/m2.
Next, we can calculate the forward current using the following equation:
where If is the forward current, J is the current density calculated above, and A is the cross-sectional area of the diode.
Substituting the given values, we get:
Solving this equation, we get the forward current to be 10.3 nA.
Conclusion
Therefore, the forward current flowing through the ideal PN junction diode under a forward bias voltage of 0.5V and cross-sectional area of 10um x 10um is 10.3 nA.