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Consider a semiconductor material in which electrons and holes have the same capture cross sections and thermal velocities. A p-n junction is formed using this material and all the trap levels in the depletion region lie at the mid-gap. As the doping of P and N sides of the junction is reduced (but is still much greater than intrinsic concentration), the generation current under reverse bias.? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about Consider a semiconductor material in which electrons and holes have the same capture cross sections and thermal velocities. A p-n junction is formed using this material and all the trap levels in the depletion region lie at the mid-gap. As the doping of P and N sides of the junction is reduced (but is still much greater than intrinsic concentration), the generation current under reverse bias.? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider a semiconductor material in which electrons and holes have the same capture cross sections and thermal velocities. A p-n junction is formed using this material and all the trap levels in the depletion region lie at the mid-gap. As the doping of P and N sides of the junction is reduced (but is still much greater than intrinsic concentration), the generation current under reverse bias.?.

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