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Select the CORRECT statement(s) regarding semiconductor devices
- a)Mobility of electrons always increases with temperature in Silicon beyond 300 K.
- b)Electrons and holes are of equal density in an intrinsic semiconductor at equilibrium.
- c)Total current is spatially constant in a two terminal electronic device in dark under steady state condition.
- d)Collector region is generally more heavily doped than Base region in a BJT.
Correct answer is option 'B,C'. Can you explain this answer?
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Select the CORRECT statement(s) regarding semiconductor devicesa)Mobi...
Mobility of electrons always increases with temperature in Silicon beyond 300 K:
This statement is incorrect. The mobility of electrons in silicon does not always increase with temperature beyond 300 K. The mobility of electrons in a semiconductor is influenced by various factors, including temperature. At low temperatures, the mobility of electrons is limited by lattice scattering, which decreases as the temperature increases. However, at higher temperatures, the mobility can be limited by other scattering mechanisms, such as ionized impurity scattering or acoustic phonon scattering. Therefore, the mobility of electrons in silicon can either increase or decrease with temperature, depending on the dominant scattering mechanism.
Electrons and holes are of equal density in an intrinsic semiconductor at equilibrium:
This statement is correct. In an intrinsic semiconductor, the number of electrons and holes are equal at equilibrium. An intrinsic semiconductor is a pure semiconductor without any impurities. At thermal equilibrium, electrons can be excited from the valence band to the conduction band, creating an equal number of holes in the valence band. The density of electrons and holes is determined by the energy bandgap of the semiconductor material and the temperature. In an intrinsic semiconductor, the Fermi level is located at the middle of the energy bandgap, resulting in equal densities of electrons and holes.
Total current is spatially constant in a two terminal electronic device in dark under steady state condition:
This statement is correct. In a two-terminal electronic device, such as a diode or a transistor, the total current is spatially constant in the dark under steady-state conditions. In a steady-state condition, the current flowing into one terminal is equal to the current flowing out of the other terminal, resulting in a constant total current throughout the device. This is based on the principle of charge conservation. However, it is important to note that the current can vary with time, depending on the input signal or biasing conditions.
Collector region is generally more heavily doped than Base region in a BJT:
This statement is correct. In a bipolar junction transistor (BJT), the collector region is generally more heavily doped than the base region. This is done to ensure that the collector-base junction is reverse-biased, which allows for proper transistor operation. The heavily doped collector region helps in reducing the resistance of the collector terminal, allowing for efficient current flow. The base region, on the other hand, is lightly doped to facilitate the injection and control of minority carriers (electrons or holes) from the emitter region. This doping profile is essential for the transistor to function as an amplifier or a switch.
This statement is incorrect. The mobility of electrons in silicon does not always increase with temperature beyond 300 K. The mobility of electrons in a semiconductor is influenced by various factors, including temperature. At low temperatures, the mobility of electrons is limited by lattice scattering, which decreases as the temperature increases. However, at higher temperatures, the mobility can be limited by other scattering mechanisms, such as ionized impurity scattering or acoustic phonon scattering. Therefore, the mobility of electrons in silicon can either increase or decrease with temperature, depending on the dominant scattering mechanism.
Electrons and holes are of equal density in an intrinsic semiconductor at equilibrium:
This statement is correct. In an intrinsic semiconductor, the number of electrons and holes are equal at equilibrium. An intrinsic semiconductor is a pure semiconductor without any impurities. At thermal equilibrium, electrons can be excited from the valence band to the conduction band, creating an equal number of holes in the valence band. The density of electrons and holes is determined by the energy bandgap of the semiconductor material and the temperature. In an intrinsic semiconductor, the Fermi level is located at the middle of the energy bandgap, resulting in equal densities of electrons and holes.
Total current is spatially constant in a two terminal electronic device in dark under steady state condition:
This statement is correct. In a two-terminal electronic device, such as a diode or a transistor, the total current is spatially constant in the dark under steady-state conditions. In a steady-state condition, the current flowing into one terminal is equal to the current flowing out of the other terminal, resulting in a constant total current throughout the device. This is based on the principle of charge conservation. However, it is important to note that the current can vary with time, depending on the input signal or biasing conditions.
Collector region is generally more heavily doped than Base region in a BJT:
This statement is correct. In a bipolar junction transistor (BJT), the collector region is generally more heavily doped than the base region. This is done to ensure that the collector-base junction is reverse-biased, which allows for proper transistor operation. The heavily doped collector region helps in reducing the resistance of the collector terminal, allowing for efficient current flow. The base region, on the other hand, is lightly doped to facilitate the injection and control of minority carriers (electrons or holes) from the emitter region. This doping profile is essential for the transistor to function as an amplifier or a switch.
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Community Answer
Select the CORRECT statement(s) regarding semiconductor devicesa)Mobi...
From option (A)
The mobility verses temperature diagram is given by,
The mobility of electrons increases upto 300 K temperature. If we increases temperature beyond 300 K then mobility of electrons start decreasing.
Hence, option (A) is incorrect.
From option (B) :
Electrons and holes are of equal density in an intrinsic semiconductor at equilibrium
i.e. n = p = ni
Hence, option (B) is correct.
Form option (C) :
Under dark: When there is no external illumination of light in two terminal electronic devices and in such condition only current flow due to minority charge carriers.
V - I characteristic of two terminal device in dark under steady state condition is given by.
In under dark, dI0/dV = 0
The total current is constant in a two terminal electronic device in dark under steady state condition.
Hence, option (C) is correct.
Form option (D) : In BJT the emitter region has the highest doping, the collector region is doped the lowest, the doping level in the base region is smaller than that in the emitter region but higher than that in the collector region.
NE>>NB>>NC
Hence, the correct options are (B) and (C).
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Select the CORRECT statement(s) regarding semiconductor devicesa)Mobility of electrons always increases with temperature in Silicon beyond 300 K.b)Electrons and holes are of equal density in an intrinsic semiconductor at equilibrium.c)Total current is spatially constant in a two terminal electronic device in dark under steady state condition.d)Collector region is generally more heavily doped than Base region in a BJT.Correct answer is option 'B,C'. Can you explain this answer?
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