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A sample of silicon at T = 300 K is doped with boron at a concentration of 1.5 × 1015 cm-3 and with arsenic at a concentration of 8 × 1014 cm-3. The intrinsic carrier concentration of Si at T = 300 K is 1010 cm-3.
Which of the following statements about the semiconductor material is/are false?
Which of the following statements about the semiconductor material is/are false?
- a)Electron concentration n0 = 1.42 × 105 cm-3
- b)Hole concentration p0 = 7 × 1014 cm-3
- c)The semiconductor material is n-type
- d)The semiconductor material is p-type
Correct answer is option 'C'. Can you explain this answer?
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Most Upvoted Answer
A sample of silicon at T = 300 K is doped with boron at a concentratio...
Boron is an acceptor atom (i.e a p-type impurity)
Na = 1.5 × 1015 cm-3
Arsenic is a donor atom (i.e. an n-type impurity)
Nd = 8 × 1014 cm-3
Since, Na > Nd, the given semiconductor is a p-type semiconductor.
Also, since Na - Nd ≫ ni the majority carrier hole concentration will be:
p0 = Na - Nd
p0 = 1.5 × 1015 – 8 × 1014 cm-3
p0 = (15 - 8) × 1014 cm-3
p0 = 7 × 1014 cm-3
Using mass action law
Na = 1.5 × 1015 cm-3
Arsenic is a donor atom (i.e. an n-type impurity)
Nd = 8 × 1014 cm-3
Since, Na > Nd, the given semiconductor is a p-type semiconductor.
Also, since Na - Nd ≫ ni the majority carrier hole concentration will be:
p0 = Na - Nd
p0 = 1.5 × 1015 – 8 × 1014 cm-3
p0 = (15 - 8) × 1014 cm-3
p0 = 7 × 1014 cm-3
Using mass action law
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Community Answer
A sample of silicon at T = 300 K is doped with boron at a concentratio...
X 10^16 atoms/cm^3. The intrinsic carrier concentration of silicon at T = 300 K is 1.5 x 10^10 cm^-3. Calculate the excess carrier concentration in the silicon sample due to the boron doping.
To calculate the excess carrier concentration, we need to find the difference between the total carrier concentration and the intrinsic carrier concentration.
Total carrier concentration = intrinsic carrier concentration + dopant concentration
Total carrier concentration = 1.5 x 10^10 cm^-3 + 1.5 x 10^16 cm^-3
Total carrier concentration = 1.5 x 10^10 cm^-3 + 1.5 x 10^16 cm^-3
Total carrier concentration = 1.5 x 10^16 cm^-3 + 1.5 x 10^16 cm^-3
Total carrier concentration = 3.0 x 10^16 cm^-3
Excess carrier concentration = Total carrier concentration - Intrinsic carrier concentration
Excess carrier concentration = 3.0 x 10^16 cm^-3 - 1.5 x 10^10 cm^-3
Excess carrier concentration = 2.99 x 10^16 cm^-3
Therefore, the excess carrier concentration in the silicon sample due to the boron doping is 2.99 x 10^16 cm^-3.
To calculate the excess carrier concentration, we need to find the difference between the total carrier concentration and the intrinsic carrier concentration.
Total carrier concentration = intrinsic carrier concentration + dopant concentration
Total carrier concentration = 1.5 x 10^10 cm^-3 + 1.5 x 10^16 cm^-3
Total carrier concentration = 1.5 x 10^10 cm^-3 + 1.5 x 10^16 cm^-3
Total carrier concentration = 1.5 x 10^16 cm^-3 + 1.5 x 10^16 cm^-3
Total carrier concentration = 3.0 x 10^16 cm^-3
Excess carrier concentration = Total carrier concentration - Intrinsic carrier concentration
Excess carrier concentration = 3.0 x 10^16 cm^-3 - 1.5 x 10^10 cm^-3
Excess carrier concentration = 2.99 x 10^16 cm^-3
Therefore, the excess carrier concentration in the silicon sample due to the boron doping is 2.99 x 10^16 cm^-3.
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A sample of silicon at T = 300 K is doped with boron at a concentration of 1.5 × 1015 cm-3 and with arsenic at a concentration of 8 × 1014 cm-3. The intrinsic carrier concentration of Si at T = 300 K is 1010 cm-3.Which of the following statements about the semiconductor material is/are false?a)Electron concentration n0 = 1.42 × 105 cm-3b)Hole concentration p0 = 7 × 1014 cm-3c)The semiconductor material is n-typed)The semiconductor material is p-typeCorrect answer is option 'C'. Can you explain this answer?
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A sample of silicon at T = 300 K is doped with boron at a concentration of 1.5 × 1015 cm-3 and with arsenic at a concentration of 8 × 1014 cm-3. The intrinsic carrier concentration of Si at T = 300 K is 1010 cm-3.Which of the following statements about the semiconductor material is/are false?a)Electron concentration n0 = 1.42 × 105 cm-3b)Hole concentration p0 = 7 × 1014 cm-3c)The semiconductor material is n-typed)The semiconductor material is p-typeCorrect answer is option 'C'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about A sample of silicon at T = 300 K is doped with boron at a concentration of 1.5 × 1015 cm-3 and with arsenic at a concentration of 8 × 1014 cm-3. The intrinsic carrier concentration of Si at T = 300 K is 1010 cm-3.Which of the following statements about the semiconductor material is/are false?a)Electron concentration n0 = 1.42 × 105 cm-3b)Hole concentration p0 = 7 × 1014 cm-3c)The semiconductor material is n-typed)The semiconductor material is p-typeCorrect answer is option 'C'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A sample of silicon at T = 300 K is doped with boron at a concentration of 1.5 × 1015 cm-3 and with arsenic at a concentration of 8 × 1014 cm-3. The intrinsic carrier concentration of Si at T = 300 K is 1010 cm-3.Which of the following statements about the semiconductor material is/are false?a)Electron concentration n0 = 1.42 × 105 cm-3b)Hole concentration p0 = 7 × 1014 cm-3c)The semiconductor material is n-typed)The semiconductor material is p-typeCorrect answer is option 'C'. Can you explain this answer?.
A sample of silicon at T = 300 K is doped with boron at a concentration of 1.5 × 1015 cm-3 and with arsenic at a concentration of 8 × 1014 cm-3. The intrinsic carrier concentration of Si at T = 300 K is 1010 cm-3.Which of the following statements about the semiconductor material is/are false?a)Electron concentration n0 = 1.42 × 105 cm-3b)Hole concentration p0 = 7 × 1014 cm-3c)The semiconductor material is n-typed)The semiconductor material is p-typeCorrect answer is option 'C'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about A sample of silicon at T = 300 K is doped with boron at a concentration of 1.5 × 1015 cm-3 and with arsenic at a concentration of 8 × 1014 cm-3. The intrinsic carrier concentration of Si at T = 300 K is 1010 cm-3.Which of the following statements about the semiconductor material is/are false?a)Electron concentration n0 = 1.42 × 105 cm-3b)Hole concentration p0 = 7 × 1014 cm-3c)The semiconductor material is n-typed)The semiconductor material is p-typeCorrect answer is option 'C'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A sample of silicon at T = 300 K is doped with boron at a concentration of 1.5 × 1015 cm-3 and with arsenic at a concentration of 8 × 1014 cm-3. The intrinsic carrier concentration of Si at T = 300 K is 1010 cm-3.Which of the following statements about the semiconductor material is/are false?a)Electron concentration n0 = 1.42 × 105 cm-3b)Hole concentration p0 = 7 × 1014 cm-3c)The semiconductor material is n-typed)The semiconductor material is p-typeCorrect answer is option 'C'. Can you explain this answer?.
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