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A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of the following statements is true for the energy band diagram shown in the following figure?
  • a)
    Intrinsic semiconductor doped with pentavalent atoms to form an n-type semiconductor
  • b)
    Intrinsic semiconductor doped with trivalent atoms to form an n-type semiconductor
  • c)
    Intrinsic semiconductor doped with pentavalent atoms to form a p-type semiconductor
  • d)
    Intrinsic semiconductor doped with trivalent atoms to form a p-type semiconductor
Correct answer is option 'A'. Can you explain this answer?
Most Upvoted Answer
A small percentage of impurity is added to an intrinsic semiconductor ...
The new energy level is close to the edge of the conduction band (Ec).
Thus it is an n-type semiconductor that is formed by doping a pure or intrinsic semiconductor with a pentavalent atom.
Note:
Fermi level of an intrinsic semiconductor is as shown:
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Community Answer
A small percentage of impurity is added to an intrinsic semiconductor ...
The new energy level is close to the edge of the conduction band (Ec).
Thus it is an n-type semiconductor that is formed by doping a pure or intrinsic semiconductor with a pentavalent atom.
Note:
Fermi level of an intrinsic semiconductor is as shown:
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A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of the following statements is true for the energy band diagram shown in the following figure?a)Intrinsic semiconductor doped with pentavalent atoms to form an n-type semiconductorb)Intrinsic semiconductor doped with trivalent atoms to form an n-type semiconductorc)Intrinsic semiconductor doped with pentavalent atoms to form a p-type semiconductord)Intrinsic semiconductor doped with trivalent atoms to form a p-type semiconductorCorrect answer is option 'A'. Can you explain this answer?
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