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In an intrinsic semiconductor, the Fermi energy level EF doesn’t lie in the middle of the band gap cause
- a)Mobility of electrons is greater than holes
- b)Different effective masses of electron and hole in semiconductors
- c)Different concentration of electrons and holes
- d)Given statement in question is wrong
Correct answer is option 'B'. Can you explain this answer?
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Verified Answer
In an intrinsic semiconductor, the Fermi energy level EFdoesn’t ...
In an intrinsic semi-conductor the Fermi energy
Where NC and NV are density of state in valence and conduction bond respectively.
Since NC ∝ mn, effective mass of electron and Nv ∝ mp, effective mass of hole
Since mn and mp are not equal
Since mn and mp are not equal
Most Upvoted Answer
In an intrinsic semiconductor, the Fermi energy level EFdoesn’t ...
Not exist.
In an intrinsic semiconductor, the Fermi energy level (EF) does exist. The Fermi energy level represents the highest energy level occupied by electrons at absolute zero temperature. In an intrinsic semiconductor, the Fermi energy level lies in the middle of the energy band gap between the valence band and the conduction band. It serves as a reference point for determining the probability of finding electrons in different energy states in the semiconductor.
In an intrinsic semiconductor, the Fermi energy level (EF) does exist. The Fermi energy level represents the highest energy level occupied by electrons at absolute zero temperature. In an intrinsic semiconductor, the Fermi energy level lies in the middle of the energy band gap between the valence band and the conduction band. It serves as a reference point for determining the probability of finding electrons in different energy states in the semiconductor.
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In an intrinsic semiconductor, the Fermi energy level EFdoesn’t ...
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In an intrinsic semiconductor, the Fermi energy level EFdoesn’t lie in the middle of the band gap causea)Mobility of electrons is greater than holesb)Different effective masses of electron and hole in semiconductorsc)Different concentration of electrons and holesd)Given statement in question is wrongCorrect answer is option 'B'. Can you explain this answer?
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In an intrinsic semiconductor, the Fermi energy level EFdoesn’t lie in the middle of the band gap causea)Mobility of electrons is greater than holesb)Different effective masses of electron and hole in semiconductorsc)Different concentration of electrons and holesd)Given statement in question is wrongCorrect answer is option 'B'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about In an intrinsic semiconductor, the Fermi energy level EFdoesn’t lie in the middle of the band gap causea)Mobility of electrons is greater than holesb)Different effective masses of electron and hole in semiconductorsc)Different concentration of electrons and holesd)Given statement in question is wrongCorrect answer is option 'B'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for In an intrinsic semiconductor, the Fermi energy level EFdoesn’t lie in the middle of the band gap causea)Mobility of electrons is greater than holesb)Different effective masses of electron and hole in semiconductorsc)Different concentration of electrons and holesd)Given statement in question is wrongCorrect answer is option 'B'. Can you explain this answer?.
In an intrinsic semiconductor, the Fermi energy level EFdoesn’t lie in the middle of the band gap causea)Mobility of electrons is greater than holesb)Different effective masses of electron and hole in semiconductorsc)Different concentration of electrons and holesd)Given statement in question is wrongCorrect answer is option 'B'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about In an intrinsic semiconductor, the Fermi energy level EFdoesn’t lie in the middle of the band gap causea)Mobility of electrons is greater than holesb)Different effective masses of electron and hole in semiconductorsc)Different concentration of electrons and holesd)Given statement in question is wrongCorrect answer is option 'B'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for In an intrinsic semiconductor, the Fermi energy level EFdoesn’t lie in the middle of the band gap causea)Mobility of electrons is greater than holesb)Different effective masses of electron and hole in semiconductorsc)Different concentration of electrons and holesd)Given statement in question is wrongCorrect answer is option 'B'. Can you explain this answer?.
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