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Assume electronic charge q = 1.6×1019C,AT/q = 25mV and electron mobility μn = 1000cm2/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021cm4, the magnitude of electron diffusion current density {in A/cm ?
    Correct answer is '4000'. Can you explain this answer?
    Most Upvoted Answer
    Assume electronic charge q = 1.6×10−19C,AT/q = 25mV and electron mobi...
    Given Information:
    - Electronic charge q = 1.6×10^(-19) C
    - Applied voltage AT/q = 25 mV
    - Electron mobility μn = 1000 cm^2/V-s
    - Concentration gradient of electrons injected into a P-type silicon sample = 1×10^21 cm^4

    Formula:
    The formula to calculate the magnitude of electron diffusion current density (Jn) is given by:
    Jn = q * μn * (AT/q) * ∇n

    where:
    Jn is the magnitude of electron diffusion current density
    q is the electronic charge
    μn is the electron mobility
    AT/q is the applied voltage in volts
    ∇n is the concentration gradient of electrons in cm^(-3)

    Calculation:
    Given:
    q = 1.6×10^(-19) C
    AT/q = 25 mV = 0.025 V
    μn = 1000 cm^2/V-s
    ∇n = 1×10^21 cm^4

    Substituting the given values into the formula:
    Jn = (1.6×10^(-19) C) * (1000 cm^2/V-s) * (0.025 V) * (1×10^21 cm^4)
    Jn = 4 * 10^(-18) * 1000 * 0.025 * 10^21 A/cm
    Jn = 4 * 10^(-18 + 3 + 2 + 21) A/cm
    Jn = 4 * 10^8 A/cm

    Therefore, the magnitude of electron diffusion current density is 4000 A/cm.
    Free Test
    Community Answer
    Assume electronic charge q = 1.6×10−19C,AT/q = 25mV and electron mobi...
    Given
    q = 1.6 × 10−19; kT/q = 2.5mV
    μn = 1000cm2/v−s
    From Eindtein relation,
    D/μn = kT/q ⇒ D = 25mV × 1000cm2/v−s
    ⇒ 25em2/s
    Diffusion current Density
    J = qDndn/dx =1.6 × 10−19 × 25 × 1 × 1021
    = 4000.A/cm2
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    Assume electronic charge q = 1.6×10−19C,AT/q = 25mV and electron mobility μn = 1000cm2/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021cm4, the magnitude of electron diffusion current density {in A/cm ?Correct answer is '4000'. Can you explain this answer?
    Question Description
    Assume electronic charge q = 1.6×10−19C,AT/q = 25mV and electron mobility μn = 1000cm2/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021cm4, the magnitude of electron diffusion current density {in A/cm ?Correct answer is '4000'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about Assume electronic charge q = 1.6×10−19C,AT/q = 25mV and electron mobility μn = 1000cm2/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021cm4, the magnitude of electron diffusion current density {in A/cm ?Correct answer is '4000'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Assume electronic charge q = 1.6×10−19C,AT/q = 25mV and electron mobility μn = 1000cm2/V−s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021cm4, the magnitude of electron diffusion current density {in A/cm ?Correct answer is '4000'. Can you explain this answer?.
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