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Calculate the drift current density in a semiconductor for a given electric field. Consider a gallium arsenide sample at T = 300 K with doping concentrations of Na =2.8 X 1016 cm-3 and Nd = 1016 cm-3. Assume complete ionization and assume electron and hole mobility given as 8500 cm2/V-s and 400 cm2/V-s . Calculate the drift current density if the applied electric field is E = 10V/cm.?
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Given information:
- Temperature (T) = 300 K
- Doping concentration of acceptors (Na) = 2.8 x 10^16 cm^-3
- Doping concentration of donors (Nd) = 10^16 cm^-3
- Electron mobility (μn) = 8500 cm^2/V-s
- Hole mobility (μp) = 400 cm^2/V-s
- Applied electric field (E) = 10 V/cm
Calculating drift current density:
1. Calculating carrier densities:
- For an n-type semiconductor, the electron density (n) can be calculated using the equation:
n = Nd = 10^16 cm^-3
- For a p-type semiconductor, the hole density (p) can be calculated using the equation:
p = Na = 2.8 x 10^16 cm^-3
2. Calculating drift velocities:
- The drift velocity of electrons (v_n) can be calculated using the equation:
v_n = μn * E
where μn is the electron mobility and E is the applied electric field.
- The drift velocity of holes (v_p) can be calculated using the equation:
v_p = μp * E
where μp is the hole mobility and E is the applied electric field.
3. Calculating drift current densities:
- The drift current density of electrons (J_n) can be calculated using the equation:
J_n = q * n * v_n
where q is the elementary charge, n is the electron density, and v_n is the drift velocity of electrons.
- The drift current density of holes (J_p) can be calculated using the equation:
J_p = q * p * v_p
where q is the elementary charge, p is the hole density, and v_p is the drift velocity of holes.
4. Calculating the total drift current density:
- The total drift current density (J_total) can be calculated by summing the drift current densities of electrons and holes:
J_total = J_n + J_p
Calculating the drift current density:
1. Calculating carrier densities:
- n = Nd = 10^16 cm^-3
- p = Na = 2.8 x 10^16 cm^-3
2. Calculating drift velocities:
- v_n = μn * E = 8500 cm^2/V-s * 10 V/cm = 85000 cm/s
- v_p = μp * E = 400 cm^2/V-s * 10 V/cm = 4000 cm/s
3. Calculating drift current densities:
- J_n = q * n * v_n = (1.6 x 10^-19 C) * (10^16 cm^-3) * (85000 cm/s) = 1.36 A/cm^2
- J_p = q * p * v_p = (1.6 x 10^-19 C) * (2.8 x 10^16 cm^-3) * (4000
- Temperature (T) = 300 K
- Doping concentration of acceptors (Na) = 2.8 x 10^16 cm^-3
- Doping concentration of donors (Nd) = 10^16 cm^-3
- Electron mobility (μn) = 8500 cm^2/V-s
- Hole mobility (μp) = 400 cm^2/V-s
- Applied electric field (E) = 10 V/cm
Calculating drift current density:
1. Calculating carrier densities:
- For an n-type semiconductor, the electron density (n) can be calculated using the equation:
n = Nd = 10^16 cm^-3
- For a p-type semiconductor, the hole density (p) can be calculated using the equation:
p = Na = 2.8 x 10^16 cm^-3
2. Calculating drift velocities:
- The drift velocity of electrons (v_n) can be calculated using the equation:
v_n = μn * E
where μn is the electron mobility and E is the applied electric field.
- The drift velocity of holes (v_p) can be calculated using the equation:
v_p = μp * E
where μp is the hole mobility and E is the applied electric field.
3. Calculating drift current densities:
- The drift current density of electrons (J_n) can be calculated using the equation:
J_n = q * n * v_n
where q is the elementary charge, n is the electron density, and v_n is the drift velocity of electrons.
- The drift current density of holes (J_p) can be calculated using the equation:
J_p = q * p * v_p
where q is the elementary charge, p is the hole density, and v_p is the drift velocity of holes.
4. Calculating the total drift current density:
- The total drift current density (J_total) can be calculated by summing the drift current densities of electrons and holes:
J_total = J_n + J_p
Calculating the drift current density:
1. Calculating carrier densities:
- n = Nd = 10^16 cm^-3
- p = Na = 2.8 x 10^16 cm^-3
2. Calculating drift velocities:
- v_n = μn * E = 8500 cm^2/V-s * 10 V/cm = 85000 cm/s
- v_p = μp * E = 400 cm^2/V-s * 10 V/cm = 4000 cm/s
3. Calculating drift current densities:
- J_n = q * n * v_n = (1.6 x 10^-19 C) * (10^16 cm^-3) * (85000 cm/s) = 1.36 A/cm^2
- J_p = q * p * v_p = (1.6 x 10^-19 C) * (2.8 x 10^16 cm^-3) * (4000
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Calculate the drift current density in a semiconductor for a given electric field. Consider a gallium arsenide sample at T = 300 K with doping concentrations of Na =2.8 X 1016 cm-3 and Nd = 1016 cm-3. Assume complete ionization and assume electron and hole mobility given as 8500 cm2/V-s and 400 cm2/V-s . Calculate the drift current density if the applied electric field is E = 10V/cm.?
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Calculate the drift current density in a semiconductor for a given electric field. Consider a gallium arsenide sample at T = 300 K with doping concentrations of Na =2.8 X 1016 cm-3 and Nd = 1016 cm-3. Assume complete ionization and assume electron and hole mobility given as 8500 cm2/V-s and 400 cm2/V-s . Calculate the drift current density if the applied electric field is E = 10V/cm.? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about Calculate the drift current density in a semiconductor for a given electric field. Consider a gallium arsenide sample at T = 300 K with doping concentrations of Na =2.8 X 1016 cm-3 and Nd = 1016 cm-3. Assume complete ionization and assume electron and hole mobility given as 8500 cm2/V-s and 400 cm2/V-s . Calculate the drift current density if the applied electric field is E = 10V/cm.? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Calculate the drift current density in a semiconductor for a given electric field. Consider a gallium arsenide sample at T = 300 K with doping concentrations of Na =2.8 X 1016 cm-3 and Nd = 1016 cm-3. Assume complete ionization and assume electron and hole mobility given as 8500 cm2/V-s and 400 cm2/V-s . Calculate the drift current density if the applied electric field is E = 10V/cm.?.
Calculate the drift current density in a semiconductor for a given electric field. Consider a gallium arsenide sample at T = 300 K with doping concentrations of Na =2.8 X 1016 cm-3 and Nd = 1016 cm-3. Assume complete ionization and assume electron and hole mobility given as 8500 cm2/V-s and 400 cm2/V-s . Calculate the drift current density if the applied electric field is E = 10V/cm.? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about Calculate the drift current density in a semiconductor for a given electric field. Consider a gallium arsenide sample at T = 300 K with doping concentrations of Na =2.8 X 1016 cm-3 and Nd = 1016 cm-3. Assume complete ionization and assume electron and hole mobility given as 8500 cm2/V-s and 400 cm2/V-s . Calculate the drift current density if the applied electric field is E = 10V/cm.? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Calculate the drift current density in a semiconductor for a given electric field. Consider a gallium arsenide sample at T = 300 K with doping concentrations of Na =2.8 X 1016 cm-3 and Nd = 1016 cm-3. Assume complete ionization and assume electron and hole mobility given as 8500 cm2/V-s and 400 cm2/V-s . Calculate the drift current density if the applied electric field is E = 10V/cm.?.
Solutions for Calculate the drift current density in a semiconductor for a given electric field. Consider a gallium arsenide sample at T = 300 K with doping concentrations of Na =2.8 X 1016 cm-3 and Nd = 1016 cm-3. Assume complete ionization and assume electron and hole mobility given as 8500 cm2/V-s and 400 cm2/V-s . Calculate the drift current density if the applied electric field is E = 10V/cm.? in English & in Hindi are available as part of our courses for Electronics and Communication Engineering (ECE).
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Calculate the drift current density in a semiconductor for a given electric field. Consider a gallium arsenide sample at T = 300 K with doping concentrations of Na =2.8 X 1016 cm-3 and Nd = 1016 cm-3. Assume complete ionization and assume electron and hole mobility given as 8500 cm2/V-s and 400 cm2/V-s . Calculate the drift current density if the applied electric field is E = 10V/cm.?, a detailed solution for Calculate the drift current density in a semiconductor for a given electric field. Consider a gallium arsenide sample at T = 300 K with doping concentrations of Na =2.8 X 1016 cm-3 and Nd = 1016 cm-3. Assume complete ionization and assume electron and hole mobility given as 8500 cm2/V-s and 400 cm2/V-s . Calculate the drift current density if the applied electric field is E = 10V/cm.? has been provided alongside types of Calculate the drift current density in a semiconductor for a given electric field. Consider a gallium arsenide sample at T = 300 K with doping concentrations of Na =2.8 X 1016 cm-3 and Nd = 1016 cm-3. Assume complete ionization and assume electron and hole mobility given as 8500 cm2/V-s and 400 cm2/V-s . Calculate the drift current density if the applied electric field is E = 10V/cm.? theory, EduRev gives you an
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