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Electric Field of 1 V/m is applied to a Boron doped Silicon semiconductor slab having a doping density of 1016 atoms/cm3 at 300 K temperature. Determine the approximate resistivity of the slab.
(Consider intrinsic carrier concentration of Silicon at 300 K = 1.5 × 1010 /cm3; Hole Mobility = 500 cm2/Vs at 300 K; Electron Mobility = 1300 cm2/Vs at 300 K).
- a)0.48 Ω - cm
- b)0.35 Ω - cm
- c)0.16 Ω - cm
- d)1.25 Ω - cm
Correct answer is option 'D'. Can you explain this answer?
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Most Upvoted Answer
Electric Field of 1 V/m is applied to a Boron doped Silicon semiconduc...
Concept:
For a semiconductor slab doped with excess carriers and placed in an electric field, the current equation is given by:-
J = σ E
Where J = Current Density
σ = Conductivity of the semiconductor defined as:
σ = qnμn + qpμp
n = excess electrons contributing to the current conduction.
p = excess holes contributing to the current conduction.
Also, the Resistivity is defined as the reciprocal of conductivity.
Calculation:
The given Si semiconductor is doped with Boron impurity.
So, Na = 1016 /cm3 (p-type)
q = 1.6 × 10-19 C
μn = 1300 cm2/V-s and μp = 500 cm2/V-s
The excess electrons is given by; 
Since, Na ≫ ni, we can assume that the conduction current exists only because of acceptor impunities, i.e. because of Na.
So, σ = q Na μp
ρ = Resistivity of the given Slab
Putting on the respective values, we get:
Putting on the respective values, we get:
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Community Answer
Electric Field of 1 V/m is applied to a Boron doped Silicon semiconduc...
Concept:
For a semiconductor slab doped with excess carriers and placed in an electric field, the current equation is given by:-
J = σ E
Where J = Current Density
σ = Conductivity of the semiconductor defined as:
σ = qnμn + qpμp
n = excess electrons contributing to the current conduction.
p = excess holes contributing to the current conduction.
Also, the Resistivity is defined as the reciprocal of conductivity.
Calculation:
The given Si semiconductor is doped with Boron impurity.
So, Na = 1016 /cm3 (p-type)
q = 1.6 × 10-19 C
μn = 1300 cm2/V-s and μp = 500 cm2/V-s
The excess electrons is given by;
Since, Na ≫ ni, we can assume that the conduction current exists only because of acceptor impunities, i.e. because of Na.
So, σ = q Na μp
ρ = Resistivity of the given Slab
Putting on the respective values, we get:
Putting on the respective values, we get:
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Electric Field of 1 V/m is applied to a Boron doped Silicon semiconductor slab having a doping density of 1016atoms/cm3at 300 K temperature. Determine the approximate resistivity of the slab.(Consider intrinsic carrier concentration of Silicon at 300 K = 1.5 × 1010/cm3;Hole Mobility = 500 cm2/Vs at 300 K; Electron Mobility = 1300 cm2/Vs at 300 K).a)0.48 Ω - cmb)0.35 Ω - cmc)0.16 Ω - cmd)1.25 Ω - cmCorrect answer is option 'D'. Can you explain this answer?
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Electric Field of 1 V/m is applied to a Boron doped Silicon semiconductor slab having a doping density of 1016atoms/cm3at 300 K temperature. Determine the approximate resistivity of the slab.(Consider intrinsic carrier concentration of Silicon at 300 K = 1.5 × 1010/cm3;Hole Mobility = 500 cm2/Vs at 300 K; Electron Mobility = 1300 cm2/Vs at 300 K).a)0.48 Ω - cmb)0.35 Ω - cmc)0.16 Ω - cmd)1.25 Ω - cmCorrect answer is option 'D'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about Electric Field of 1 V/m is applied to a Boron doped Silicon semiconductor slab having a doping density of 1016atoms/cm3at 300 K temperature. Determine the approximate resistivity of the slab.(Consider intrinsic carrier concentration of Silicon at 300 K = 1.5 × 1010/cm3;Hole Mobility = 500 cm2/Vs at 300 K; Electron Mobility = 1300 cm2/Vs at 300 K).a)0.48 Ω - cmb)0.35 Ω - cmc)0.16 Ω - cmd)1.25 Ω - cmCorrect answer is option 'D'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Electric Field of 1 V/m is applied to a Boron doped Silicon semiconductor slab having a doping density of 1016atoms/cm3at 300 K temperature. Determine the approximate resistivity of the slab.(Consider intrinsic carrier concentration of Silicon at 300 K = 1.5 × 1010/cm3;Hole Mobility = 500 cm2/Vs at 300 K; Electron Mobility = 1300 cm2/Vs at 300 K).a)0.48 Ω - cmb)0.35 Ω - cmc)0.16 Ω - cmd)1.25 Ω - cmCorrect answer is option 'D'. Can you explain this answer?.
Electric Field of 1 V/m is applied to a Boron doped Silicon semiconductor slab having a doping density of 1016atoms/cm3at 300 K temperature. Determine the approximate resistivity of the slab.(Consider intrinsic carrier concentration of Silicon at 300 K = 1.5 × 1010/cm3;Hole Mobility = 500 cm2/Vs at 300 K; Electron Mobility = 1300 cm2/Vs at 300 K).a)0.48 Ω - cmb)0.35 Ω - cmc)0.16 Ω - cmd)1.25 Ω - cmCorrect answer is option 'D'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about Electric Field of 1 V/m is applied to a Boron doped Silicon semiconductor slab having a doping density of 1016atoms/cm3at 300 K temperature. Determine the approximate resistivity of the slab.(Consider intrinsic carrier concentration of Silicon at 300 K = 1.5 × 1010/cm3;Hole Mobility = 500 cm2/Vs at 300 K; Electron Mobility = 1300 cm2/Vs at 300 K).a)0.48 Ω - cmb)0.35 Ω - cmc)0.16 Ω - cmd)1.25 Ω - cmCorrect answer is option 'D'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Electric Field of 1 V/m is applied to a Boron doped Silicon semiconductor slab having a doping density of 1016atoms/cm3at 300 K temperature. Determine the approximate resistivity of the slab.(Consider intrinsic carrier concentration of Silicon at 300 K = 1.5 × 1010/cm3;Hole Mobility = 500 cm2/Vs at 300 K; Electron Mobility = 1300 cm2/Vs at 300 K).a)0.48 Ω - cmb)0.35 Ω - cmc)0.16 Ω - cmd)1.25 Ω - cmCorrect answer is option 'D'. Can you explain this answer?.
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ample number of questions to practice Electric Field of 1 V/m is applied to a Boron doped Silicon semiconductor slab having a doping density of 1016atoms/cm3at 300 K temperature. Determine the approximate resistivity of the slab.(Consider intrinsic carrier concentration of Silicon at 300 K = 1.5 × 1010/cm3;Hole Mobility = 500 cm2/Vs at 300 K; Electron Mobility = 1300 cm2/Vs at 300 K).a)0.48 Ω - cmb)0.35 Ω - cmc)0.16 Ω - cmd)1.25 Ω - cmCorrect answer is option 'D'. Can you explain this answer? tests, examples and also practice Electronics and Communication Engineering (ECE) tests.
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