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Assume that the zero for electrostatic potential is in the semiconductor bulk at large x and that there is no metal semiconductor work function difference. The relative dielectric constant for the oxide is ϵr= 11.8. If the intrinsic concentration is 1010/cm3. The doping density NDis _____ × 1017/cm3(KT = 0.026 V)Correct answer is between '1.9,2.1'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about Assume that the zero for electrostatic potential is in the semiconductor bulk at large x and that there is no metal semiconductor work function difference. The relative dielectric constant for the oxide is ϵr= 11.8. If the intrinsic concentration is 1010/cm3. The doping density NDis _____ × 1017/cm3(KT = 0.026 V)Correct answer is between '1.9,2.1'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Assume that the zero for electrostatic potential is in the semiconductor bulk at large x and that there is no metal semiconductor work function difference. The relative dielectric constant for the oxide is ϵr= 11.8. If the intrinsic concentration is 1010/cm3. The doping density NDis _____ × 1017/cm3(KT = 0.026 V)Correct answer is between '1.9,2.1'. Can you explain this answer?.

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