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As shown a uniformly doped Silicon (Si) bar of length L = 0.1 mm with a donor concentration ND = 1016 cm-3is illuminated at x = 0 such that electron and hole pairs are generated at therate of whereHole lifetime is 10-4 s,electronic charge hole diffusion coefficient Dp = 100 cm2/sand low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at x = L, the magnitude of the diffusion current density at x = L/2, in A/cm2, is _________.Correct answer is '15.9 to 16.1'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about As shown a uniformly doped Silicon (Si) bar of length L = 0.1 mm with a donor concentration ND = 1016 cm-3is illuminated at x = 0 such that electron and hole pairs are generated at therate of whereHole lifetime is 10-4 s,electronic charge hole diffusion coefficient Dp = 100 cm2/sand low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at x = L, the magnitude of the diffusion current density at x = L/2, in A/cm2, is _________.Correct answer is '15.9 to 16.1'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for As shown a uniformly doped Silicon (Si) bar of length L = 0.1 mm with a donor concentration ND = 1016 cm-3is illuminated at x = 0 such that electron and hole pairs are generated at therate of whereHole lifetime is 10-4 s,electronic charge hole diffusion coefficient Dp = 100 cm2/sand low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at x = L, the magnitude of the diffusion current density at x = L/2, in A/cm2, is _________.Correct answer is '15.9 to 16.1'. Can you explain this answer?.

Solutions for As shown a uniformly doped Silicon (Si) bar of length L = 0.1 mm with a donor concentration ND = 1016 cm-3is illuminated at x = 0 such that electron and hole pairs are generated at therate of whereHole lifetime is 10-4 s,electronic charge hole diffusion coefficient Dp = 100 cm2/sand low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at x = L, the magnitude of the diffusion current density at x = L/2, in A/cm2, is _________.Correct answer is '15.9 to 16.1'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electronics and Communication Engineering (ECE). Download more important topics, notes, lectures and mock test series for Electronics and Communication Engineering (ECE) Exam by signing up for free.

Here you can find the meaning of As shown a uniformly doped Silicon (Si) bar of length L = 0.1 mm with a donor concentration ND = 1016 cm-3is illuminated at x = 0 such that electron and hole pairs are generated at therate of whereHole lifetime is 10-4 s,electronic charge hole diffusion coefficient Dp = 100 cm2/sand low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at x = L, the magnitude of the diffusion current density at x = L/2, in A/cm2, is _________.Correct answer is '15.9 to 16.1'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of As shown a uniformly doped Silicon (Si) bar of length L = 0.1 mm with a donor concentration ND = 1016 cm-3is illuminated at x = 0 such that electron and hole pairs are generated at therate of whereHole lifetime is 10-4 s,electronic charge hole diffusion coefficient Dp = 100 cm2/sand low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at x = L, the magnitude of the diffusion current density at x = L/2, in A/cm2, is _________.Correct answer is '15.9 to 16.1'. Can you explain this answer?, a detailed solution for As shown a uniformly doped Silicon (Si) bar of length L = 0.1 mm with a donor concentration ND = 1016 cm-3is illuminated at x = 0 such that electron and hole pairs are generated at therate of whereHole lifetime is 10-4 s,electronic charge hole diffusion coefficient Dp = 100 cm2/sand low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at x = L, the magnitude of the diffusion current density at x = L/2, in A/cm2, is _________.Correct answer is '15.9 to 16.1'. Can you explain this answer? has been provided alongside types of As shown a uniformly doped Silicon (Si) bar of length L = 0.1 mm with a donor concentration ND = 1016 cm-3is illuminated at x = 0 such that electron and hole pairs are generated at therate of whereHole lifetime is 10-4 s,electronic charge hole diffusion coefficient Dp = 100 cm2/sand low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at x = L, the magnitude of the diffusion current density at x = L/2, in A/cm2, is _________.Correct answer is '15.9 to 16.1'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice As shown a uniformly doped Silicon (Si) bar of length L = 0.1 mm with a donor concentration ND = 1016 cm-3is illuminated at x = 0 such that electron and hole pairs are generated at therate of whereHole lifetime is 10-4 s,electronic charge hole diffusion coefficient Dp = 100 cm2/sand low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at x = L, the magnitude of the diffusion current density at x = L/2, in A/cm2, is _________.Correct answer is '15.9 to 16.1'. Can you explain this answer? tests, examples and also practice Electronics and Communication Engineering (ECE) tests.