Electronics and Communication Engineering (ECE) Exam > Electronics and Communication Engineering (ECE) Questions > A bar of silicon is doped with a boron concen...
Start Learning for Free
A bar of silicon is doped with a boron concentration of 1016 cm-3 and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020 cm-3s-1. If the recombination lifetime is 100 μs, the intrinsic carrier concentration of silicon is 1010 cm-3 and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure is
- a)1032 cm-6
- b)1020 cm-6
- c)2 × 1032 cm-6
- d)2 × 1020 cm-6
Correct answer is option 'C'. Can you explain this answer?
| FREE This question is part of | Download PDF Attempt this Test |
Most Upvoted Answer
A bar of silicon is doped with a boron concentration of 1016cm-3and as...
The recombination lifetime is given as 100 μs (microseconds).
To find the recombination rate, we can use the formula:
recombination rate = electron-hole pair generation rate / recombination lifetime
Given that the electron-hole pair generation rate is 1020 cm^-3s^-1 and the recombination lifetime is 100 μs (or 100 x 10^-6 s), we can substitute these values into the formula:
recombination rate = (1020 cm^-3s^-1) / (100 x 10^-6 s)
= 1020 cm^-3s^-1 / 10^-4 s
= 1020 cm^-3s^-1 x 10^4 s^-1
= 1020 x 10^4 cm^-3
Therefore, the recombination rate is 1.02 x 10^8 cm^-3.
To find the recombination rate, we can use the formula:
recombination rate = electron-hole pair generation rate / recombination lifetime
Given that the electron-hole pair generation rate is 1020 cm^-3s^-1 and the recombination lifetime is 100 μs (or 100 x 10^-6 s), we can substitute these values into the formula:
recombination rate = (1020 cm^-3s^-1) / (100 x 10^-6 s)
= 1020 cm^-3s^-1 / 10^-4 s
= 1020 cm^-3s^-1 x 10^4 s^-1
= 1020 x 10^4 cm^-3
Therefore, the recombination rate is 1.02 x 10^8 cm^-3.
Free Test
FREE
| Start Free Test |
Community Answer
A bar of silicon is doped with a boron concentration of 1016cm-3and as...
Concept:
The number of minority carriers generated because of light is given by the generation rate as:
The number of minority carriers generated because of light is given by the generation rate as:
Analysis:
NA = 1016 / cm3
G = 1020 / cm3 – sec
τ = 100 μsec
ni = 1010 / cm3
before shining light:
Hole concertration (p) ≃ NA = 1016 / cm3
Electron concentration (n)
After illumination of light minority carrier will be generated.
So after light illumination hole conc. (p’) = p + Δp
p’ = 1016 + 1020 × 10-6 × 100
= 2 × 1016 / cm3
After illumination e- conc. (n’) = n + Δn
= 104 + 1020 × 10-6 × 100
≃ 1016 / cm3
Product of e- and hole concertration = n’ × p’
= 2 × 1032 / cm-6
Attention Electronics and Communication Engineering (ECE) Students!
To make sure you are not studying endlessly, EduRev has designed Electronics and Communication Engineering (ECE) study material, with Structured Courses, Videos, & Test Series. Plus get personalized analysis, doubt solving and improvement plans to achieve a great score in Electronics and Communication Engineering (ECE).
|
Explore Courses for Electronics and Communication Engineering (ECE) exam
|
|
Top Courses for Electronics and Communication Engineering (ECE)View all
A bar of silicon is doped with a boron concentration of 1016cm-3and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020cm-3s-1. If the recombination lifetime is 100μs, the intrinsic carrier concentration of silicon is 1010cm-3and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure isa)1032cm-6b)1020cm-6c)2× 1032cm-6d)2× 1020cm-6Correct answer is option 'C'. Can you explain this answer?
Question Description
A bar of silicon is doped with a boron concentration of 1016cm-3and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020cm-3s-1. If the recombination lifetime is 100μs, the intrinsic carrier concentration of silicon is 1010cm-3and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure isa)1032cm-6b)1020cm-6c)2× 1032cm-6d)2× 1020cm-6Correct answer is option 'C'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about A bar of silicon is doped with a boron concentration of 1016cm-3and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020cm-3s-1. If the recombination lifetime is 100μs, the intrinsic carrier concentration of silicon is 1010cm-3and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure isa)1032cm-6b)1020cm-6c)2× 1032cm-6d)2× 1020cm-6Correct answer is option 'C'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A bar of silicon is doped with a boron concentration of 1016cm-3and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020cm-3s-1. If the recombination lifetime is 100μs, the intrinsic carrier concentration of silicon is 1010cm-3and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure isa)1032cm-6b)1020cm-6c)2× 1032cm-6d)2× 1020cm-6Correct answer is option 'C'. Can you explain this answer?.
A bar of silicon is doped with a boron concentration of 1016cm-3and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020cm-3s-1. If the recombination lifetime is 100μs, the intrinsic carrier concentration of silicon is 1010cm-3and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure isa)1032cm-6b)1020cm-6c)2× 1032cm-6d)2× 1020cm-6Correct answer is option 'C'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about A bar of silicon is doped with a boron concentration of 1016cm-3and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020cm-3s-1. If the recombination lifetime is 100μs, the intrinsic carrier concentration of silicon is 1010cm-3and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure isa)1032cm-6b)1020cm-6c)2× 1032cm-6d)2× 1020cm-6Correct answer is option 'C'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A bar of silicon is doped with a boron concentration of 1016cm-3and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020cm-3s-1. If the recombination lifetime is 100μs, the intrinsic carrier concentration of silicon is 1010cm-3and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure isa)1032cm-6b)1020cm-6c)2× 1032cm-6d)2× 1020cm-6Correct answer is option 'C'. Can you explain this answer?.
Solutions for A bar of silicon is doped with a boron concentration of 1016cm-3and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020cm-3s-1. If the recombination lifetime is 100μs, the intrinsic carrier concentration of silicon is 1010cm-3and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure isa)1032cm-6b)1020cm-6c)2× 1032cm-6d)2× 1020cm-6Correct answer is option 'C'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electronics and Communication Engineering (ECE).
Download more important topics, notes, lectures and mock test series for Electronics and Communication Engineering (ECE) Exam by signing up for free.
Here you can find the meaning of A bar of silicon is doped with a boron concentration of 1016cm-3and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020cm-3s-1. If the recombination lifetime is 100μs, the intrinsic carrier concentration of silicon is 1010cm-3and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure isa)1032cm-6b)1020cm-6c)2× 1032cm-6d)2× 1020cm-6Correct answer is option 'C'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of
A bar of silicon is doped with a boron concentration of 1016cm-3and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020cm-3s-1. If the recombination lifetime is 100μs, the intrinsic carrier concentration of silicon is 1010cm-3and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure isa)1032cm-6b)1020cm-6c)2× 1032cm-6d)2× 1020cm-6Correct answer is option 'C'. Can you explain this answer?, a detailed solution for A bar of silicon is doped with a boron concentration of 1016cm-3and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020cm-3s-1. If the recombination lifetime is 100μs, the intrinsic carrier concentration of silicon is 1010cm-3and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure isa)1032cm-6b)1020cm-6c)2× 1032cm-6d)2× 1020cm-6Correct answer is option 'C'. Can you explain this answer? has been provided alongside types of A bar of silicon is doped with a boron concentration of 1016cm-3and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020cm-3s-1. If the recombination lifetime is 100μs, the intrinsic carrier concentration of silicon is 1010cm-3and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure isa)1032cm-6b)1020cm-6c)2× 1032cm-6d)2× 1020cm-6Correct answer is option 'C'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice A bar of silicon is doped with a boron concentration of 1016cm-3and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 1020cm-3s-1. If the recombination lifetime is 100μs, the intrinsic carrier concentration of silicon is 1010cm-3and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure isa)1032cm-6b)1020cm-6c)2× 1032cm-6d)2× 1020cm-6Correct answer is option 'C'. Can you explain this answer? tests, examples and also practice Electronics and Communication Engineering (ECE) tests.
|
|
Explore Courses for Electronics and Communication Engineering (ECE) exam
|
|
Suggested Free Tests
Signup for Free!
Signup to see your scores go up within 7 days! Learn & Practice with 1000+ FREE Notes, Videos & Tests.
x
![]()
For Your Perfect Score in Electronics and Communication Engineering (ECE)
The Best you need at One Place
|
© EduRev
|
Education Revolution
|
Follow Us
|
Signup to see your scores
go up within 7 days!
Access 1000+ FREE Docs, Videos and Tests
Takes less than 10 seconds to signup