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In a very long p-type Si bar with doping concentration Na= 1017cm-3, excess holes are injected such that excessive concentration of holes at x = 0 is 5 × 1016cm-3.The hole concentration at x = 1 μm is _____ × 1017cm-3. Take μp= 500 cm2/v-s and recombination time constant τp­= 10-8s, kT = 0.0259 eVCorrect answer is between '1.35,1.39'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about In a very long p-type Si bar with doping concentration Na= 1017cm-3, excess holes are injected such that excessive concentration of holes at x = 0 is 5 × 1016cm-3.The hole concentration at x = 1 μm is _____ × 1017cm-3. Take μp= 500 cm2/v-s and recombination time constant τp­= 10-8s, kT = 0.0259 eVCorrect answer is between '1.35,1.39'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for In a very long p-type Si bar with doping concentration Na= 1017cm-3, excess holes are injected such that excessive concentration of holes at x = 0 is 5 × 1016cm-3.The hole concentration at x = 1 μm is _____ × 1017cm-3. Take μp= 500 cm2/v-s and recombination time constant τp­= 10-8s, kT = 0.0259 eVCorrect answer is between '1.35,1.39'. Can you explain this answer?.

Solutions for In a very long p-type Si bar with doping concentration Na= 1017cm-3, excess holes are injected such that excessive concentration of holes at x = 0 is 5 × 1016cm-3.The hole concentration at x = 1 μm is _____ × 1017cm-3. Take μp= 500 cm2/v-s and recombination time constant τp­= 10-8s, kT = 0.0259 eVCorrect answer is between '1.35,1.39'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electronics and Communication Engineering (ECE). Download more important topics, notes, lectures and mock test series for Electronics and Communication Engineering (ECE) Exam by signing up for free.

Here you can find the meaning of In a very long p-type Si bar with doping concentration Na= 1017cm-3, excess holes are injected such that excessive concentration of holes at x = 0 is 5 × 1016cm-3.The hole concentration at x = 1 μm is _____ × 1017cm-3. Take μp= 500 cm2/v-s and recombination time constant τp­= 10-8s, kT = 0.0259 eVCorrect answer is between '1.35,1.39'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of In a very long p-type Si bar with doping concentration Na= 1017cm-3, excess holes are injected such that excessive concentration of holes at x = 0 is 5 × 1016cm-3.The hole concentration at x = 1 μm is _____ × 1017cm-3. Take μp= 500 cm2/v-s and recombination time constant τp­= 10-8s, kT = 0.0259 eVCorrect answer is between '1.35,1.39'. Can you explain this answer?, a detailed solution for In a very long p-type Si bar with doping concentration Na= 1017cm-3, excess holes are injected such that excessive concentration of holes at x = 0 is 5 × 1016cm-3.The hole concentration at x = 1 μm is _____ × 1017cm-3. Take μp= 500 cm2/v-s and recombination time constant τp­= 10-8s, kT = 0.0259 eVCorrect answer is between '1.35,1.39'. Can you explain this answer? has been provided alongside types of In a very long p-type Si bar with doping concentration Na= 1017cm-3, excess holes are injected such that excessive concentration of holes at x = 0 is 5 × 1016cm-3.The hole concentration at x = 1 μm is _____ × 1017cm-3. Take μp= 500 cm2/v-s and recombination time constant τp­= 10-8s, kT = 0.0259 eVCorrect answer is between '1.35,1.39'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice In a very long p-type Si bar with doping concentration Na= 1017cm-3, excess holes are injected such that excessive concentration of holes at x = 0 is 5 × 1016cm-3.The hole concentration at x = 1 μm is _____ × 1017cm-3. Take μp= 500 cm2/v-s and recombination time constant τp­= 10-8s, kT = 0.0259 eVCorrect answer is between '1.35,1.39'. Can you explain this answer? tests, examples and also practice Electronics and Communication Engineering (ECE) tests.