Question Description
Holes are injected into n-type Ge so that the at the surface of the semiconductor hole concentration is 1014/cm3. If diffusion constant of hole in Ge is 49cm2/sec and minority carrier life time is τp = 10-3 sec. Then the hole concentration Δp at a distance of 4mm from the surface is ______1014/cm3.a)0.12b)0.10c)0.16d)None of aboveCorrect answer is option 'C'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about Holes are injected into n-type Ge so that the at the surface of the semiconductor hole concentration is 1014/cm3. If diffusion constant of hole in Ge is 49cm2/sec and minority carrier life time is τp = 10-3 sec. Then the hole concentration Δp at a distance of 4mm from the surface is ______1014/cm3.a)0.12b)0.10c)0.16d)None of aboveCorrect answer is option 'C'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Holes are injected into n-type Ge so that the at the surface of the semiconductor hole concentration is 1014/cm3. If diffusion constant of hole in Ge is 49cm2/sec and minority carrier life time is τp = 10-3 sec. Then the hole concentration Δp at a distance of 4mm from the surface is ______1014/cm3.a)0.12b)0.10c)0.16d)None of aboveCorrect answer is option 'C'. Can you explain this answer?.

Solutions for Holes are injected into n-type Ge so that the at the surface of the semiconductor hole concentration is 1014/cm3. If diffusion constant of hole in Ge is 49cm2/sec and minority carrier life time is τp = 10-3 sec. Then the hole concentration Δp at a distance of 4mm from the surface is ______1014/cm3.a)0.12b)0.10c)0.16d)None of aboveCorrect answer is option 'C'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electronics and Communication Engineering (ECE). Download more important topics, notes, lectures and mock test series for Electronics and Communication Engineering (ECE) Exam by signing up for free.

Here you can find the meaning of Holes are injected into n-type Ge so that the at the surface of the semiconductor hole concentration is 1014/cm3. If diffusion constant of hole in Ge is 49cm2/sec and minority carrier life time is τp = 10-3 sec. Then the hole concentration Δp at a distance of 4mm from the surface is ______1014/cm3.a)0.12b)0.10c)0.16d)None of aboveCorrect answer is option 'C'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of Holes are injected into n-type Ge so that the at the surface of the semiconductor hole concentration is 1014/cm3. If diffusion constant of hole in Ge is 49cm2/sec and minority carrier life time is τp = 10-3 sec. Then the hole concentration Δp at a distance of 4mm from the surface is ______1014/cm3.a)0.12b)0.10c)0.16d)None of aboveCorrect answer is option 'C'. Can you explain this answer?, a detailed solution for Holes are injected into n-type Ge so that the at the surface of the semiconductor hole concentration is 1014/cm3. If diffusion constant of hole in Ge is 49cm2/sec and minority carrier life time is τp = 10-3 sec. Then the hole concentration Δp at a distance of 4mm from the surface is ______1014/cm3.a)0.12b)0.10c)0.16d)None of aboveCorrect answer is option 'C'. Can you explain this answer? has been provided alongside types of Holes are injected into n-type Ge so that the at the surface of the semiconductor hole concentration is 1014/cm3. If diffusion constant of hole in Ge is 49cm2/sec and minority carrier life time is τp = 10-3 sec. Then the hole concentration Δp at a distance of 4mm from the surface is ______1014/cm3.a)0.12b)0.10c)0.16d)None of aboveCorrect answer is option 'C'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice Holes are injected into n-type Ge so that the at the surface of the semiconductor hole concentration is 1014/cm3. If diffusion constant of hole in Ge is 49cm2/sec and minority carrier life time is τp = 10-3 sec. Then the hole concentration Δp at a distance of 4mm from the surface is ______1014/cm3.a)0.12b)0.10c)0.16d)None of aboveCorrect answer is option 'C'. Can you explain this answer? tests, examples and also practice Electronics and Communication Engineering (ECE) tests.