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In a germanium semiconductor at 127°C has a hole concentration gradient between two points 1.5 × 1022/m3. If the hole mobility in germanium is 800 cm2/v-s, then the diffusion current density is ______ A/m2.Correct answer is between '-6.8,-6.6'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about In a germanium semiconductor at 127°C has a hole concentration gradient between two points 1.5 × 1022/m3. If the hole mobility in germanium is 800 cm2/v-s, then the diffusion current density is ______ A/m2.Correct answer is between '-6.8,-6.6'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for In a germanium semiconductor at 127°C has a hole concentration gradient between two points 1.5 × 1022/m3. If the hole mobility in germanium is 800 cm2/v-s, then the diffusion current density is ______ A/m2.Correct answer is between '-6.8,-6.6'. Can you explain this answer?.

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