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Consider an ideal PN junction diode with cross-section dimension of 10 um X 10um. The reverse-saturation current density is 0.1A/m2. At a forward bias voltage of 0.5V across the diode, the forward current flowing through the diode is (Assume thermal energy is 25meV and ignore recombination and generation effects)?
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Consider an ideal PN junction diode with cross-section dimension of 10...
Calculation of Forward Current in an Ideal PN Junction Diode


Given Information


  • Cross-sectional area of diode: 10um x 10um

  • Reverse-saturation current density: 0.1A/m2

  • Forward bias voltage: 0.5V

  • Thermal energy: 25meV



Calculation

Firstly, we need to calculate the current density under forward bias voltage. For an ideal PN junction diode, the current density can be calculated using the following equation:




where J(V) is the current density, J0 is the reverse saturation current density, q is the charge of an electron (1.6 x 10-19 C), k is the Boltzmann constant (1.38 x 10-23 J/K), T is the absolute temperature (assumed to be 300K), and V is the applied voltage.


Substituting the given values, we get:




Solving this equation, we get the current density under forward bias voltage to be 1.03 x 103 A/m2.


Next, we can calculate the forward current using the following equation:




where If is the forward current, J is the current density calculated above, and A is the cross-sectional area of the diode.


Substituting the given values, we get:




Solving this equation, we get the forward current to be 10.3 nA.


Conclusion

Therefore, the forward current flowing through the ideal PN junction diode under a forward bias voltage of 0.5V and cross-sectional area of 10um x 10um is 10.3 nA.
Community Answer
Consider an ideal PN junction diode with cross-section dimension of 10...
0.25 amp/sec
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Consider an ideal PN junction diode with cross-section dimension of 10 um X 10um. The reverse-saturation current density is 0.1A/m2. At a forward bias voltage of 0.5V across the diode, the forward current flowing through the diode is (Assume thermal energy is 25meV and ignore recombination and generation effects)?
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Consider an ideal PN junction diode with cross-section dimension of 10 um X 10um. The reverse-saturation current density is 0.1A/m2. At a forward bias voltage of 0.5V across the diode, the forward current flowing through the diode is (Assume thermal energy is 25meV and ignore recombination and generation effects)? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about Consider an ideal PN junction diode with cross-section dimension of 10 um X 10um. The reverse-saturation current density is 0.1A/m2. At a forward bias voltage of 0.5V across the diode, the forward current flowing through the diode is (Assume thermal energy is 25meV and ignore recombination and generation effects)? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider an ideal PN junction diode with cross-section dimension of 10 um X 10um. The reverse-saturation current density is 0.1A/m2. At a forward bias voltage of 0.5V across the diode, the forward current flowing through the diode is (Assume thermal energy is 25meV and ignore recombination and generation effects)?.
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