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Construction of enhancement type MOSFET - 1 Video Lecture | Analog and Digital Electronics - Electrical Engineering (EE)

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FAQs on Construction of enhancement type MOSFET - 1 Video Lecture - Analog and Digital Electronics - Electrical Engineering (EE)

1. What is an enhancement type MOSFET?
Ans. An enhancement type MOSFET is a type of metal-oxide-semiconductor field-effect transistor that requires a positive voltage on the gate terminal to create a conducting channel between the source and drain terminals.
2. How is an enhancement type MOSFET constructed?
Ans. An enhancement type MOSFET is constructed by depositing a gate oxide layer on a semiconductor substrate, followed by the deposition of a gate electrode. Source and drain regions are then created on either side of the gate electrode.
3. What is the role of the gate terminal in an enhancement type MOSFET?
Ans. The gate terminal in an enhancement type MOSFET controls the conductivity of the channel between the source and drain terminals. When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, allowing current to flow.
4. What are the advantages of using enhancement type MOSFETs in electronic circuits?
Ans. Enhancement type MOSFETs have high input impedance, low input capacitance, and can be easily integrated into digital and analog circuits. They also offer low power consumption and high switching speeds.
5. How does the operation of an enhancement type MOSFET differ from that of a depletion type MOSFET?
Ans. In an enhancement type MOSFET, a conducting channel is only formed when a positive voltage is applied to the gate terminal. In contrast, a depletion type MOSFET has a conducting channel by default and requires a negative voltage on the gate terminal to reduce the channel conductivity.
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