Explanation:

A power diode is a semiconductor device that conducts current in one direction only. It is used in various applications such as rectifiers, voltage regulators, and inverters. An ideal power diode should have the following characteristics:

1. Large reverse breakdown voltage: A power diode should have a high reverse breakdown voltage to prevent damage to the device when a reverse voltage is applied. This is because a reverse voltage can cause the diode to breakdown and conduct current in the reverse direction, which can cause damage to other components in the circuit.

2. High ohmic junction resistance: A power diode should have a high ohmic junction resistance to minimize the leakage current that flows through the device when it is reverse-biased. This leakage current can cause the diode to overheat and fail, which can damage other components in the circuit.

3. Low forward current carrying capacity: A power diode should have a low forward current carrying capacity to prevent excessive current flow through the device. This is because excessive current flow can cause the diode to overheat and fail, which can damage other components in the circuit.

4. High reverse recovery time: A power diode should have a high reverse recovery time to prevent voltage spikes that can occur when the diode switches from the forward-biased to the reverse-biased state. This is because a fast switching diode can cause voltage spikes that can damage other components in the circuit.

Therefore, the correct option is B, which states that an ideal power diode must have a large reverse breakdown voltage.