The threshold voltage depends on:a)The workfunction difference between...
The threshold voltage depends on: The workfunction difference between gate and channel, The gate voltage component to change surface potential, The gate voltage component to offset the depletion charge and fixed charges in gate oxide
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The threshold voltage depends on:a)The workfunction difference between...
Explanation:
The threshold voltage of a MOSFET depends on various factors that influence the behavior of the device. Let's break down the options provided in the question to understand how each one contributes to determining the threshold voltage:
a) The workfunction difference between gate and channel:
- The workfunction of the gate material and the channel material play a crucial role in determining the threshold voltage of a MOSFET. The workfunction difference affects the energy barrier for the flow of charge carriers, which in turn impacts the threshold voltage.
b) The gate voltage component to change surface potential:
- The gate voltage applied to the MOSFET controls the surface potential of the channel region. By changing the surface potential, the conductivity of the channel can be altered, ultimately affecting the threshold voltage of the device.
c) The gate voltage component to offset the depletion charge and fixed charges in gate oxide:
- The gate voltage is also responsible for offsetting the depletion charge and fixed charges present in the gate oxide. These charges influence the distribution of charge carriers in the channel region, thereby affecting the threshold voltage of the MOSFET.
d) All of the mentioned:
- The correct answer is option 'D' because all the factors mentioned above, i.e., the workfunction difference between gate and channel, the gate voltage component to change surface potential, and the gate voltage component to offset depletion charge and fixed charges in gate oxide, collectively determine the threshold voltage of a MOSFET.
In conclusion, the threshold voltage of a MOSFET is influenced by a combination of these factors, highlighting the importance of understanding the interplay between various parameters in the operation of semiconductor devices.
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