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The amount of parasitic capacitance at the output node is determined by:
- a)Concentration of the impurity doped
- b)Size of the total drain diffusion area
- c)Charges stored in the capacitor
- d)None of the mentioned
Correct answer is option 'B'. Can you explain this answer?
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The amount of parasitic capacitance at the output node is determined b...
The amount of parasitic capacitance is a linear function of drain diffusion area.
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The amount of parasitic capacitance at the output node is determined b...
Size of the total drain diffusion area:
The amount of parasitic capacitance at the output node is determined by the size of the total drain diffusion area.
Explanation:
- The parasitic capacitance at the output node is mainly due to the overlap capacitance between the drain and the substrate in a MOSFET.
- The total drain diffusion area directly affects the amount of overlap capacitance, which in turn determines the parasitic capacitance at the output node.
- A larger drain diffusion area results in a larger overlap capacitance and hence a higher parasitic capacitance at the output node.
- Therefore, the size of the total drain diffusion area plays a crucial role in determining the amount of parasitic capacitance at the output node.
In conclusion, the size of the total drain diffusion area is a key factor in determining the amount of parasitic capacitance at the output node in a MOSFET.
The amount of parasitic capacitance at the output node is determined by the size of the total drain diffusion area.
Explanation:
- The parasitic capacitance at the output node is mainly due to the overlap capacitance between the drain and the substrate in a MOSFET.
- The total drain diffusion area directly affects the amount of overlap capacitance, which in turn determines the parasitic capacitance at the output node.
- A larger drain diffusion area results in a larger overlap capacitance and hence a higher parasitic capacitance at the output node.
- Therefore, the size of the total drain diffusion area plays a crucial role in determining the amount of parasitic capacitance at the output node.
In conclusion, the size of the total drain diffusion area is a key factor in determining the amount of parasitic capacitance at the output node in a MOSFET.
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