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To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________
  • a)
    a lightly doped n layer is grown between the two p & n layers
  • b)
    a heavily doped n layer is grown between the two p & n layers
  • c)
    a lightly doped p layer is grown between the two p & n layers
  • d)
    a heavily doped p layer is grown between the two p & n layers
Correct answer is option 'A'. Can you explain this answer?
Verified Answer
To make a signal diode suitable for high current & high voltage ca...
The above process simply the one used to manufacture power diodes.
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To make a signal diode suitable for high current & high voltage ca...
Applications, the following steps can be taken:

1. Choose a diode with a higher current rating: Look for a diode with a higher current rating than the one you currently have. This will allow it to handle more current without getting damaged.

2. Use a heat sink: A heat sink can help dissipate the heat generated by the diode during high current applications. This will prevent the diode from getting too hot and getting damaged.

3. Parallel connection: Connect multiple diodes in parallel to increase the current handling capacity. This will divide the current among the diodes, reducing the load on a single diode.

4. Use a Schottky diode: Schottky diodes have a lower forward voltage drop than regular silicon diodes. This means they dissipate less heat during high current applications and can handle more current.

5. Use a fast recovery diode: Fast recovery diodes have a shorter recovery time than regular diodes. This means they can switch on and off more quickly, making them suitable for high-frequency applications.
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To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________a)a lightly doped n layer is grown between the two p & n layersb)a heavily doped n layer is grown between the two p & n layersc)a lightly doped p layer is grown between the two p & n layersd)a heavily doped p layer is grown between the two p & n layersCorrect answer is option 'A'. Can you explain this answer? for Electrical Engineering (EE) 2025 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________a)a lightly doped n layer is grown between the two p & n layersb)a heavily doped n layer is grown between the two p & n layersc)a lightly doped p layer is grown between the two p & n layersd)a heavily doped p layer is grown between the two p & n layersCorrect answer is option 'A'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2025 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________a)a lightly doped n layer is grown between the two p & n layersb)a heavily doped n layer is grown between the two p & n layersc)a lightly doped p layer is grown between the two p & n layersd)a heavily doped p layer is grown between the two p & n layersCorrect answer is option 'A'. Can you explain this answer?.
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