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 An NMOS transistor is operating at the edge of saturation with an overdrive voltage VOV and a drain current ID. If is VOV is doubled, and we must maintain operation at the edge of saturation, what value of drain current results?
  • a)
    0.25ID
  • b)
    0.5ID
  • c)
     2ID
  • d)
    4ID
Correct answer is option 'C'. Can you explain this answer?
Verified Answer
An NMOS transistor is operating at the edge of saturation with an over...
 I0 is directly proportional to VOS.
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An NMOS transistor is operating at the edge of saturation with an over...
Explanation:
When an NMOS transistor is operating at the edge of saturation, it means that the transistor is in the saturation region of operation and the drain current is at its maximum value for a given overdrive voltage.

Given:
- The transistor is operating at the edge of saturation with an overdrive voltage VOV and a drain current ID.
- The overdrive voltage is doubled, i.e., VOVis 2 times the original value.
- We need to maintain operation at the edge of saturation.

Solution:

To maintain operation at the edge of saturation, the drain current must remain at its maximum value.

Key Point:
In a MOSFET transistor, the drain current (ID) is directly proportional to the square of the overdrive voltage (VOV).

So, when the overdrive voltage is doubled, the drain current will increase by a factor of four (2^2).

Calculating the new drain current:

Let's assume the new drain current is I'D.

Since the overdrive voltage is doubled, we have:
VOV' = 2 * VOV

According to the relationship between drain current and overdrive voltage:
I'D = (ID * (VOV')^2) / (VOV^2)

Substituting the values, we get:
I'D = (ID * (2 * VOV)^2) / (VOV^2)

Simplifying the equation:
I'D = (ID * 4 * VOV^2) / (VOV^2)

The terms (VOV^2) cancel out:
I'D = 4 * ID

Therefore, the new drain current is four times the original drain current.

Conclusion:
When the overdrive voltage of an NMOS transistor is doubled while maintaining operation at the edge of saturation, the drain current will increase by a factor of four. So, the correct answer is option 'c) 2ID'.
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An NMOS transistor is operating at the edge of saturation with an overdrive voltage VOVand a drain current ID. If is VOVis doubled, and we must maintain operation at the edge of saturation, what value of drain current results?a)0.25IDb)0.5IDc)2IDd)4IDCorrect answer is option 'C'. Can you explain this answer?
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An NMOS transistor is operating at the edge of saturation with an overdrive voltage VOVand a drain current ID. If is VOVis doubled, and we must maintain operation at the edge of saturation, what value of drain current results?a)0.25IDb)0.5IDc)2IDd)4IDCorrect answer is option 'C'. Can you explain this answer? for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about An NMOS transistor is operating at the edge of saturation with an overdrive voltage VOVand a drain current ID. If is VOVis doubled, and we must maintain operation at the edge of saturation, what value of drain current results?a)0.25IDb)0.5IDc)2IDd)4IDCorrect answer is option 'C'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for An NMOS transistor is operating at the edge of saturation with an overdrive voltage VOVand a drain current ID. If is VOVis doubled, and we must maintain operation at the edge of saturation, what value of drain current results?a)0.25IDb)0.5IDc)2IDd)4IDCorrect answer is option 'C'. Can you explain this answer?.
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