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A germanium sample of dimensions 1 cm × 1 cm is illuminated with a 20 mW, 600 nm laser light source as shown in the figure. The illuminated sample surface has a 100 nm of loss-less Silicon dioxide layer that reflects one-fourth of the incident light. From the remaining light, one-third of the power is reflected from the Silicon dixodieGermanium interface, one-third is absorbed in the Germanium layer, and one-third is transmitted through the other side of the sample. If the absorption coefficient of Germanium at 600 nm is 3 × 104 cm-1 and the bandgap is 0.66 eV, the thickness of the Germanium layer, rounded off to 3 decimal places, is _________ μm.Correct answer is '0.231'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about A germanium sample of dimensions 1 cm × 1 cm is illuminated with a 20 mW, 600 nm laser light source as shown in the figure. The illuminated sample surface has a 100 nm of loss-less Silicon dioxide layer that reflects one-fourth of the incident light. From the remaining light, one-third of the power is reflected from the Silicon dixodieGermanium interface, one-third is absorbed in the Germanium layer, and one-third is transmitted through the other side of the sample. If the absorption coefficient of Germanium at 600 nm is 3 × 104 cm-1 and the bandgap is 0.66 eV, the thickness of the Germanium layer, rounded off to 3 decimal places, is _________ μm.Correct answer is '0.231'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A germanium sample of dimensions 1 cm × 1 cm is illuminated with a 20 mW, 600 nm laser light source as shown in the figure. The illuminated sample surface has a 100 nm of loss-less Silicon dioxide layer that reflects one-fourth of the incident light. From the remaining light, one-third of the power is reflected from the Silicon dixodieGermanium interface, one-third is absorbed in the Germanium layer, and one-third is transmitted through the other side of the sample. If the absorption coefficient of Germanium at 600 nm is 3 × 104 cm-1 and the bandgap is 0.66 eV, the thickness of the Germanium layer, rounded off to 3 decimal places, is _________ μm.Correct answer is '0.231'. Can you explain this answer?.

Solutions for A germanium sample of dimensions 1 cm × 1 cm is illuminated with a 20 mW, 600 nm laser light source as shown in the figure. The illuminated sample surface has a 100 nm of loss-less Silicon dioxide layer that reflects one-fourth of the incident light. From the remaining light, one-third of the power is reflected from the Silicon dixodieGermanium interface, one-third is absorbed in the Germanium layer, and one-third is transmitted through the other side of the sample. If the absorption coefficient of Germanium at 600 nm is 3 × 104 cm-1 and the bandgap is 0.66 eV, the thickness of the Germanium layer, rounded off to 3 decimal places, is _________ μm.Correct answer is '0.231'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electronics and Communication Engineering (ECE). Download more important topics, notes, lectures and mock test series for Electronics and Communication Engineering (ECE) Exam by signing up for free.

Here you can find the meaning of A germanium sample of dimensions 1 cm × 1 cm is illuminated with a 20 mW, 600 nm laser light source as shown in the figure. The illuminated sample surface has a 100 nm of loss-less Silicon dioxide layer that reflects one-fourth of the incident light. From the remaining light, one-third of the power is reflected from the Silicon dixodieGermanium interface, one-third is absorbed in the Germanium layer, and one-third is transmitted through the other side of the sample. If the absorption coefficient of Germanium at 600 nm is 3 × 104 cm-1 and the bandgap is 0.66 eV, the thickness of the Germanium layer, rounded off to 3 decimal places, is _________ μm.Correct answer is '0.231'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of A germanium sample of dimensions 1 cm × 1 cm is illuminated with a 20 mW, 600 nm laser light source as shown in the figure. The illuminated sample surface has a 100 nm of loss-less Silicon dioxide layer that reflects one-fourth of the incident light. From the remaining light, one-third of the power is reflected from the Silicon dixodieGermanium interface, one-third is absorbed in the Germanium layer, and one-third is transmitted through the other side of the sample. If the absorption coefficient of Germanium at 600 nm is 3 × 104 cm-1 and the bandgap is 0.66 eV, the thickness of the Germanium layer, rounded off to 3 decimal places, is _________ μm.Correct answer is '0.231'. Can you explain this answer?, a detailed solution for A germanium sample of dimensions 1 cm × 1 cm is illuminated with a 20 mW, 600 nm laser light source as shown in the figure. The illuminated sample surface has a 100 nm of loss-less Silicon dioxide layer that reflects one-fourth of the incident light. From the remaining light, one-third of the power is reflected from the Silicon dixodieGermanium interface, one-third is absorbed in the Germanium layer, and one-third is transmitted through the other side of the sample. If the absorption coefficient of Germanium at 600 nm is 3 × 104 cm-1 and the bandgap is 0.66 eV, the thickness of the Germanium layer, rounded off to 3 decimal places, is _________ μm.Correct answer is '0.231'. Can you explain this answer? has been provided alongside types of A germanium sample of dimensions 1 cm × 1 cm is illuminated with a 20 mW, 600 nm laser light source as shown in the figure. The illuminated sample surface has a 100 nm of loss-less Silicon dioxide layer that reflects one-fourth of the incident light. From the remaining light, one-third of the power is reflected from the Silicon dixodieGermanium interface, one-third is absorbed in the Germanium layer, and one-third is transmitted through the other side of the sample. If the absorption coefficient of Germanium at 600 nm is 3 × 104 cm-1 and the bandgap is 0.66 eV, the thickness of the Germanium layer, rounded off to 3 decimal places, is _________ μm.Correct answer is '0.231'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice A germanium sample of dimensions 1 cm × 1 cm is illuminated with a 20 mW, 600 nm laser light source as shown in the figure. The illuminated sample surface has a 100 nm of loss-less Silicon dioxide layer that reflects one-fourth of the incident light. From the remaining light, one-third of the power is reflected from the Silicon dixodieGermanium interface, one-third is absorbed in the Germanium layer, and one-third is transmitted through the other side of the sample. If the absorption coefficient of Germanium at 600 nm is 3 × 104 cm-1 and the bandgap is 0.66 eV, the thickness of the Germanium layer, rounded off to 3 decimal places, is _________ μm.Correct answer is '0.231'. Can you explain this answer? tests, examples and also practice Electronics and Communication Engineering (ECE) tests.