Which of the following biasing techniques are prone to thermal runaway...
The collector current of a fixed bias transistor is IC= β(VCC-VBE)/RB. When the temperature is increased, the reverse saturation increases. The collector current also increases. This in turn increases the current again which leads to damage of transistor.
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Which of the following biasing techniques are prone to thermal runaway...
Introduction:
Thermal runaway is a phenomenon in which the temperature of a device continues to increase due to a positive feedback loop. It can lead to the destruction of the device if not controlled. In biasing techniques for electronic devices such as transistors, it is important to choose a method that avoids or minimizes the risk of thermal runaway.
Explanation:
1. Self Bias:
Self bias, also known as emitter bias or emitter resistor bias, is a biasing technique in which a resistor is connected between the emitter and the base of a transistor. This technique provides stability and reduces the risk of thermal runaway. As the emitter current increases, the voltage drop across the emitter resistor increases, which reduces the base-emitter voltage and stabilizes the transistor's operating point.
2. Collector to Base Bias:
Collector to base bias, also known as base bias or collector resistor bias, is a biasing technique in which a resistor is connected between the collector and the base of a transistor. This technique is also relatively stable and does not usually lead to thermal runaway. The voltage drop across the collector resistor helps in stabilizing the operating point of the transistor.
3. Fixed Bias:
Fixed bias, also known as base bias, is a biasing technique in which a resistor is connected between the base and the power supply voltage, and a biasing resistor is connected between the base and the emitter of the transistor. This technique is not stable and is prone to thermal runaway. The biasing resistor is responsible for setting the operating point of the transistor. However, as the temperature increases, the transistor's characteristics change, which can cause the operating point to shift and result in thermal runaway.
4. Temperature Effect:
The biasing technique being identified by the temperature effect does not provide enough information to determine whether it is prone to thermal runaway or not. The effect of temperature on biasing techniques depends on the specific implementation and the stability measures taken.
Conclusion:
Among the given options, the fixed bias technique is prone to thermal runaway. It is important to choose biasing techniques that provide stability and minimize the risk of thermal runaway to ensure the reliable operation of electronic devices.
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