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Which of these P-N junction characteristics are not dependent on temperature.
- a)Junction resistance
- b)Reverse saturation current
- c)Bias current
- d)Barrier voltage
Correct answer is option 'A'. Can you explain this answer?
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Which of these P-N junction characteristics are not dependent on tempe...
As the temperature of the P-N junction increases the current increases and the voltage decreases so the barrier voltage, reverse saturation current, bias current changes with temperature but junction resistance is independent of temperature.
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Which of these P-N junction characteristics are not dependent on tempe...
Explanation:
Junction resistance:
- Junction resistance is dependent on temperature as the resistance of the semiconductor material changes with temperature.
- An increase in temperature leads to an increase in junction resistance, and vice versa.
Reverse saturation current:
- Reverse saturation current is the current that flows across the P-N junction when it is reverse biased.
- It is dependent on the properties of the material used in the diode and the area of the junction, but it is not significantly affected by temperature.
- The reverse saturation current remains relatively constant over a wide temperature range.
Bias current:
- Bias current is the current flowing through the P-N junction when it is forward biased.
- The bias current is dependent on the voltage applied across the junction and the properties of the material, but it is also influenced by temperature.
- An increase in temperature can cause an increase in bias current due to the change in carrier concentrations.
Barrier voltage:
- Barrier voltage is the voltage required to overcome the potential barrier at the P-N junction and allow current flow.
- Barrier voltage is dependent on the type of semiconductor material used, doping concentrations, and temperature.
- An increase in temperature can cause a decrease in barrier voltage due to the change in bandgap energy.
Therefore, the characteristics that are not dependent on temperature are the reverse saturation current.
Junction resistance:
- Junction resistance is dependent on temperature as the resistance of the semiconductor material changes with temperature.
- An increase in temperature leads to an increase in junction resistance, and vice versa.
Reverse saturation current:
- Reverse saturation current is the current that flows across the P-N junction when it is reverse biased.
- It is dependent on the properties of the material used in the diode and the area of the junction, but it is not significantly affected by temperature.
- The reverse saturation current remains relatively constant over a wide temperature range.
Bias current:
- Bias current is the current flowing through the P-N junction when it is forward biased.
- The bias current is dependent on the voltage applied across the junction and the properties of the material, but it is also influenced by temperature.
- An increase in temperature can cause an increase in bias current due to the change in carrier concentrations.
Barrier voltage:
- Barrier voltage is the voltage required to overcome the potential barrier at the P-N junction and allow current flow.
- Barrier voltage is dependent on the type of semiconductor material used, doping concentrations, and temperature.
- An increase in temperature can cause a decrease in barrier voltage due to the change in bandgap energy.
Therefore, the characteristics that are not dependent on temperature are the reverse saturation current.
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Which of these P-N junction characteristics are not dependent on temperature.a)Junction resistanceb)Reverse saturation currentc)Bias currentd)Barrier voltageCorrect answer is option 'A'. Can you explain this answer?
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