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In a p-n junction, the valence band edge of the p material is greater than which of the following band?
- a)Conduction band edge of n material
- b)Valence band edge of n material
- c)Conduction band edge of p material
- d)Fermi level of p material
Correct answer is option 'B'. Can you explain this answer?
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In a p-n junction, the valence band edge of the p material is greater ...
When the p-n junction is formed, the energy levels of the p- material go higher than the n material. That’s why the valence band of the p material will be greater than that of the n material.
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In a p-n junction, the valence band edge of the p material is greater ...
In a p-n junction, the valence band edge of the p material is greater than the valence band edge of the n material.
Explanation:
The valence band is the highest energy band that is fully occupied by electrons in the absence of any external energy input. It represents the energy levels of valence electrons, which are responsible for the bonding and conductivity of a material.
In a p-n junction, the p material is doped with impurities that introduce acceptor atoms, creating an excess of holes (positively charged carriers) in the valence band. On the other hand, the n material is doped with impurities that introduce donor atoms, creating an excess of electrons (negatively charged carriers) in the conduction band.
- The conduction band is the lowest energy band that is partially filled with electrons that are free to move and participate in electrical conduction.
In a p-n junction, the valence band edge of the p material is greater than the valence band edge of the n material due to the difference in the doping process:
- The p material is doped with acceptor impurities, which have fewer valence electrons than the atoms they replace. As a result, some valence electrons from the p material move to the acceptor impurity levels, leaving behind positively charged holes in the valence band. This leads to a higher energy level for the valence band edge in the p material compared to the n material.
- The n material is doped with donor impurities, which have more valence electrons than the atoms they replace. These extra valence electrons occupy energy levels in the conduction band, creating an excess of negatively charged carriers. However, the valence band edge in the n material remains lower than the valence band edge in the p material.
Therefore, the valence band edge of the p material is greater than the valence band edge of the n material in a p-n junction.
Explanation:
The valence band is the highest energy band that is fully occupied by electrons in the absence of any external energy input. It represents the energy levels of valence electrons, which are responsible for the bonding and conductivity of a material.
In a p-n junction, the p material is doped with impurities that introduce acceptor atoms, creating an excess of holes (positively charged carriers) in the valence band. On the other hand, the n material is doped with impurities that introduce donor atoms, creating an excess of electrons (negatively charged carriers) in the conduction band.
- The conduction band is the lowest energy band that is partially filled with electrons that are free to move and participate in electrical conduction.
In a p-n junction, the valence band edge of the p material is greater than the valence band edge of the n material due to the difference in the doping process:
- The p material is doped with acceptor impurities, which have fewer valence electrons than the atoms they replace. As a result, some valence electrons from the p material move to the acceptor impurity levels, leaving behind positively charged holes in the valence band. This leads to a higher energy level for the valence band edge in the p material compared to the n material.
- The n material is doped with donor impurities, which have more valence electrons than the atoms they replace. These extra valence electrons occupy energy levels in the conduction band, creating an excess of negatively charged carriers. However, the valence band edge in the n material remains lower than the valence band edge in the p material.
Therefore, the valence band edge of the p material is greater than the valence band edge of the n material in a p-n junction.
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In a p-n junction, the valence band edge of the p material is greater than which of the following band?a)Conduction band edge of n materialb)Valence band edge of n materialc)Conduction band edge of p materiald)Fermi level of p materialCorrect answer is option 'B'. Can you explain this answer?
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