Introduction:
In semiconductors, the Fermi energy level plays a crucial role in determining the electrical properties of the material. It represents the highest energy level occupied by electrons at absolute zero temperature. When the temperature of either n-type or p-type semiconductors increases, there are changes in the position of the Fermi energy level.

Movement of the Fermi Energy Level in n-type Semiconductors:
In n-type semiconductors, the majority charge carriers are electrons, which are introduced by doping the semiconductor with impurities that have more valence electrons than the semiconductor material. When the temperature of an n-type semiconductor increases, the following changes occur in the position of the Fermi energy level:

1. Increased thermal energy:
As the temperature rises, the thermal energy of the electrons in the conduction band increases. This leads to a broadening of the energy distribution of the electrons.

2. Shifting towards the center of the energy gap:
Due to the increased thermal energy, some electrons gain enough energy to move from the valence band to the conduction band. This results in an increase in the number of electrons in the conduction band. As a consequence, the Fermi energy level shifts towards the center of the energy gap.

Movement of the Fermi Energy Level in p-type Semiconductors:
In p-type semiconductors, the majority charge carriers are holes, which are created by doping the semiconductor with impurities that have fewer valence electrons than the semiconductor material. When the temperature of a p-type semiconductor increases, the following changes occur in the position of the Fermi energy level:

1. Increased thermal energy:
Similar to n-type semiconductors, the thermal energy of the holes in the valence band increases with temperature, leading to a broadening of the energy distribution.

2. Shifting towards the center of the energy gap:
Due to the increased thermal energy, some holes gain enough energy to move from the valence band to the conduction band. This results in a decrease in the number of holes in the valence band. Consequently, the Fermi energy level shifts towards the center of the energy gap.

Conclusion:
When the temperature of either n-type or p-type semiconductors increases, the position of the Fermi energy level shifts towards the center of the energy gap. This is a result of the increased thermal energy of the charge carriers, leading to a broadening of the energy distribution and a redistribution of electrons or holes between the valence and conduction bands. Understanding the movement of the Fermi energy level is crucial in analyzing the conductivity and other electrical properties of semiconductors at different temperatures.