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For a P-channel Ge JFET, it is having doping concentration of Na = 1.77 × 1015 cm−3 and Nd = 3.53 × 1018 per cm3, If channel thickness is a = 1 µ met. (Given Relative permittivity of Ge = 16 at T = 300° K)Q.What is value of pinch-off voltage?a)0.94 Vb)− 0.94 Vc)1.42 voltd)− 0.58 V Correct answer is option 'D'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about For a P-channel Ge JFET, it is having doping concentration of Na = 1.77 × 1015 cm−3 and Nd = 3.53 × 1018 per cm3, If channel thickness is a = 1 µ met. (Given Relative permittivity of Ge = 16 at T = 300° K)Q.What is value of pinch-off voltage?a)0.94 Vb)− 0.94 Vc)1.42 voltd)− 0.58 V Correct answer is option 'D'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for For a P-channel Ge JFET, it is having doping concentration of Na = 1.77 × 1015 cm−3 and Nd = 3.53 × 1018 per cm3, If channel thickness is a = 1 µ met. (Given Relative permittivity of Ge = 16 at T = 300° K)Q.What is value of pinch-off voltage?a)0.94 Vb)− 0.94 Vc)1.42 voltd)− 0.58 V Correct answer is option 'D'. Can you explain this answer?.

Solutions for For a P-channel Ge JFET, it is having doping concentration of Na = 1.77 × 1015 cm−3 and Nd = 3.53 × 1018 per cm3, If channel thickness is a = 1 µ met. (Given Relative permittivity of Ge = 16 at T = 300° K)Q.What is value of pinch-off voltage?a)0.94 Vb)− 0.94 Vc)1.42 voltd)− 0.58 V Correct answer is option 'D'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electronics and Communication Engineering (ECE). Download more important topics, notes, lectures and mock test series for Electronics and Communication Engineering (ECE) Exam by signing up for free.

Here you can find the meaning of For a P-channel Ge JFET, it is having doping concentration of Na = 1.77 × 1015 cm−3 and Nd = 3.53 × 1018 per cm3, If channel thickness is a = 1 µ met. (Given Relative permittivity of Ge = 16 at T = 300° K)Q.What is value of pinch-off voltage?a)0.94 Vb)− 0.94 Vc)1.42 voltd)− 0.58 V Correct answer is option 'D'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of For a P-channel Ge JFET, it is having doping concentration of Na = 1.77 × 1015 cm−3 and Nd = 3.53 × 1018 per cm3, If channel thickness is a = 1 µ met. (Given Relative permittivity of Ge = 16 at T = 300° K)Q.What is value of pinch-off voltage?a)0.94 Vb)− 0.94 Vc)1.42 voltd)− 0.58 V Correct answer is option 'D'. Can you explain this answer?, a detailed solution for For a P-channel Ge JFET, it is having doping concentration of Na = 1.77 × 1015 cm−3 and Nd = 3.53 × 1018 per cm3, If channel thickness is a = 1 µ met. (Given Relative permittivity of Ge = 16 at T = 300° K)Q.What is value of pinch-off voltage?a)0.94 Vb)− 0.94 Vc)1.42 voltd)− 0.58 V Correct answer is option 'D'. Can you explain this answer? has been provided alongside types of For a P-channel Ge JFET, it is having doping concentration of Na = 1.77 × 1015 cm−3 and Nd = 3.53 × 1018 per cm3, If channel thickness is a = 1 µ met. (Given Relative permittivity of Ge = 16 at T = 300° K)Q.What is value of pinch-off voltage?a)0.94 Vb)− 0.94 Vc)1.42 voltd)− 0.58 V Correct answer is option 'D'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice For a P-channel Ge JFET, it is having doping concentration of Na = 1.77 × 1015 cm−3 and Nd = 3.53 × 1018 per cm3, If channel thickness is a = 1 µ met. (Given Relative permittivity of Ge = 16 at T = 300° K)Q.What is value of pinch-off voltage?a)0.94 Vb)− 0.94 Vc)1.42 voltd)− 0.58 V Correct answer is option 'D'. Can you explain this answer? tests, examples and also practice Electronics and Communication Engineering (ECE) tests.