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An n-channel enhancement mode MOSFET is biased at VGS > VTH and VDS > (VGS - VTH) , where VGS is the gate-to-source voltage, VDS is the drain-to-source voltage and VTH is the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves as a
- a)voltage source with zero output impedance
- b)voltage source with non-zero output impedance
- c)current source with finite output impedance
- d)current source with infinite output impedance
Correct answer is option 'C'. Can you explain this answer?
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Verified Answer
An n-channel enhancement mode MOSFET is biased at VGS > VTH and VD...
If channel length modulation is considered and significant it means λ ≠ 0
If VAS > VTH and VDS > (VDS - VTH) then it indicates that MOSFET is working in saturation region and it can be used as an amplifier. So it can act as current source with finite output impedance.
If VAS > VTH and VDS > (VDS - VTH) then it indicates that MOSFET is working in saturation region and it can be used as an amplifier. So it can act as current source with finite output impedance.
Most Upvoted Answer
An n-channel enhancement mode MOSFET is biased at VGS > VTH and VD...
Explanation:
MOSFET is a voltage-controlled device that operates in the saturation region when the gate-to-source voltage (VGS) is greater than the threshold voltage (VTH) and the drain-to-source voltage (VDS) is also greater than zero. However, when the drain-to-source voltage increases, the width of the depletion region near the drain also increases, reducing the effective channel length and, hence, increasing the channel resistance. This phenomenon is known as channel length modulation and it affects the MOSFET output impedance.
Current Source with Finite Output Impedance:
When the MOSFET is biased in the saturation region, it behaves like a current source, and the output impedance depends on the channel length modulation effect:
- As the drain-to-source voltage (VDS) increases, the channel length modulation effect reduces the effective channel length, leading to an increase in channel resistance, which in turn increases the output impedance.
- Therefore, the MOSFET behaves like a current source with finite output impedance.
Conclusion:
Hence, the correct answer is option 'C,' i.e., the MOSFET behaves like a current source with finite output impedance due to channel length modulation effect.
MOSFET is a voltage-controlled device that operates in the saturation region when the gate-to-source voltage (VGS) is greater than the threshold voltage (VTH) and the drain-to-source voltage (VDS) is also greater than zero. However, when the drain-to-source voltage increases, the width of the depletion region near the drain also increases, reducing the effective channel length and, hence, increasing the channel resistance. This phenomenon is known as channel length modulation and it affects the MOSFET output impedance.
Current Source with Finite Output Impedance:
When the MOSFET is biased in the saturation region, it behaves like a current source, and the output impedance depends on the channel length modulation effect:
- As the drain-to-source voltage (VDS) increases, the channel length modulation effect reduces the effective channel length, leading to an increase in channel resistance, which in turn increases the output impedance.
- Therefore, the MOSFET behaves like a current source with finite output impedance.
Conclusion:
Hence, the correct answer is option 'C,' i.e., the MOSFET behaves like a current source with finite output impedance due to channel length modulation effect.
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An n-channel enhancement mode MOSFET is biased at VGS > VTH and VDS > (VGS - VTH) , where VGS is the gate-to-source voltage, VDS is the drain-to-source voltage and VTH is the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves as aa)voltage source with zero output impedanceb)voltage source with non-zero output impedancec)current source with finite output impedanced)current source with infinite output impedanceCorrect answer is option 'C'. Can you explain this answer?
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An n-channel enhancement mode MOSFET is biased at VGS > VTH and VDS > (VGS - VTH) , where VGS is the gate-to-source voltage, VDS is the drain-to-source voltage and VTH is the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves as aa)voltage source with zero output impedanceb)voltage source with non-zero output impedancec)current source with finite output impedanced)current source with infinite output impedanceCorrect answer is option 'C'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about An n-channel enhancement mode MOSFET is biased at VGS > VTH and VDS > (VGS - VTH) , where VGS is the gate-to-source voltage, VDS is the drain-to-source voltage and VTH is the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves as aa)voltage source with zero output impedanceb)voltage source with non-zero output impedancec)current source with finite output impedanced)current source with infinite output impedanceCorrect answer is option 'C'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for An n-channel enhancement mode MOSFET is biased at VGS > VTH and VDS > (VGS - VTH) , where VGS is the gate-to-source voltage, VDS is the drain-to-source voltage and VTH is the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves as aa)voltage source with zero output impedanceb)voltage source with non-zero output impedancec)current source with finite output impedanced)current source with infinite output impedanceCorrect answer is option 'C'. Can you explain this answer?.
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