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What is the concentration of holes and electrons in n-type Silicon at 300°K, if the conductivity is 30 S/cm?
Assume at 300°K, ni = 1.5 x 1010/cm3, μn = 1300 cm2/V-s and μp= 500 cm2/V-s
Assume at 300°K, ni = 1.5 x 1010/cm3, μn = 1300 cm2/V-s and μp= 500 cm2/V-s
- a)1.56 x 102 cm-3 and 1.44 x 1018 cm-3 respectively
- b)1.56 x 104 cm-3 and 1.44 x 1021 cm-3 respectively
- c)1.44 x 102 cm-3 and 1.56 x 1018 cm-3 respectively
- d)1.44 x 104 cm-3 and 1.56 x 1021 cm-3 respectively
Correct answer is option 'A'. Can you explain this answer?
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Verified Answer
What is the concentration of holes and electrons in n-type Silicon at ...
The conductivity of an n-type silicon is a σ = qn μn.
Concentration of electrons,
Using “mass-action law'',
Concentration of electrons,
Using “mass-action law'',
∴ Concentration of holes,
Most Upvoted Answer
What is the concentration of holes and electrons in n-type Silicon at ...
K?
At 300 K, the concentration of electrons in n-type Silicon can be calculated using the following equation:
n = Nc*exp[(Ef-Ec)/(kT)]
Where:
n = concentration of electrons
Nc = effective density of states in the conduction band
Ef = Fermi level (which is close to the conduction band)
Ec = energy of the conduction band edge
k = Boltzmann constant
T = temperature in Kelvin
Assuming Nc to be 2.8 x 10^19 cm^-3 and Ef to be 0.05 eV above the conduction band edge, and using T = 300 K and k = 8.617 x 10^-5 eV/K, we get:
n = 2.8 x 10^19 * exp[(0.05)/(8.617 x 10^-5 * 300)]
n = 2.8 x 10^19 * exp[1.95]
n = 9.6 x 10^20 cm^-3
Similarly, the concentration of holes in n-type Silicon at 300 K can be calculated using the following equation:
p = Nv*exp[(Ev-Ef)/(kT)]
Where:
p = concentration of holes
Nv = effective density of states in the valence band
Ev = energy of the valence band edge
k and T are as defined above
Assuming Nv to be 1.04 x 10^19 cm^-3 and Ev to be 0.56 eV below the conduction band edge, we get:
p = 1.04 x 10^19 * exp[(0.56)/(8.617 x 10^-5 * 300)]
p = 1.04 x 10^19 * exp[-0.55]
p = 3.4 x 10^17 cm^-3
Therefore, the concentration of electrons is much higher than that of holes in n-type Silicon at 300 K.
At 300 K, the concentration of electrons in n-type Silicon can be calculated using the following equation:
n = Nc*exp[(Ef-Ec)/(kT)]
Where:
n = concentration of electrons
Nc = effective density of states in the conduction band
Ef = Fermi level (which is close to the conduction band)
Ec = energy of the conduction band edge
k = Boltzmann constant
T = temperature in Kelvin
Assuming Nc to be 2.8 x 10^19 cm^-3 and Ef to be 0.05 eV above the conduction band edge, and using T = 300 K and k = 8.617 x 10^-5 eV/K, we get:
n = 2.8 x 10^19 * exp[(0.05)/(8.617 x 10^-5 * 300)]
n = 2.8 x 10^19 * exp[1.95]
n = 9.6 x 10^20 cm^-3
Similarly, the concentration of holes in n-type Silicon at 300 K can be calculated using the following equation:
p = Nv*exp[(Ev-Ef)/(kT)]
Where:
p = concentration of holes
Nv = effective density of states in the valence band
Ev = energy of the valence band edge
k and T are as defined above
Assuming Nv to be 1.04 x 10^19 cm^-3 and Ev to be 0.56 eV below the conduction band edge, we get:
p = 1.04 x 10^19 * exp[(0.56)/(8.617 x 10^-5 * 300)]
p = 1.04 x 10^19 * exp[-0.55]
p = 3.4 x 10^17 cm^-3
Therefore, the concentration of electrons is much higher than that of holes in n-type Silicon at 300 K.
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What is the concentration of holes and electrons in n-type Silicon at 300°K, if the conductivity is 30 S/cm?Assume at 300°K, ni= 1.5 x 1010/cm3, μn = 1300 cm2/V-s and μp= 500 cm2/V-sa)1.56 x 102 cm-3 and 1.44 x 1018 cm-3 respectivelyb)1.56 x 104 cm-3 and 1.44 x 1021 cm-3 respectivelyc)1.44 x 102 cm-3 and 1.56 x 1018 cm-3 respectivelyd)1.44 x 104 cm-3 and 1.56 x 1021 cm-3 respectivelyCorrect answer is option 'A'. Can you explain this answer?
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What is the concentration of holes and electrons in n-type Silicon at 300°K, if the conductivity is 30 S/cm?Assume at 300°K, ni= 1.5 x 1010/cm3, μn = 1300 cm2/V-s and μp= 500 cm2/V-sa)1.56 x 102 cm-3 and 1.44 x 1018 cm-3 respectivelyb)1.56 x 104 cm-3 and 1.44 x 1021 cm-3 respectivelyc)1.44 x 102 cm-3 and 1.56 x 1018 cm-3 respectivelyd)1.44 x 104 cm-3 and 1.56 x 1021 cm-3 respectivelyCorrect answer is option 'A'. Can you explain this answer? for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about What is the concentration of holes and electrons in n-type Silicon at 300°K, if the conductivity is 30 S/cm?Assume at 300°K, ni= 1.5 x 1010/cm3, μn = 1300 cm2/V-s and μp= 500 cm2/V-sa)1.56 x 102 cm-3 and 1.44 x 1018 cm-3 respectivelyb)1.56 x 104 cm-3 and 1.44 x 1021 cm-3 respectivelyc)1.44 x 102 cm-3 and 1.56 x 1018 cm-3 respectivelyd)1.44 x 104 cm-3 and 1.56 x 1021 cm-3 respectivelyCorrect answer is option 'A'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for What is the concentration of holes and electrons in n-type Silicon at 300°K, if the conductivity is 30 S/cm?Assume at 300°K, ni= 1.5 x 1010/cm3, μn = 1300 cm2/V-s and μp= 500 cm2/V-sa)1.56 x 102 cm-3 and 1.44 x 1018 cm-3 respectivelyb)1.56 x 104 cm-3 and 1.44 x 1021 cm-3 respectivelyc)1.44 x 102 cm-3 and 1.56 x 1018 cm-3 respectivelyd)1.44 x 104 cm-3 and 1.56 x 1021 cm-3 respectivelyCorrect answer is option 'A'. Can you explain this answer?.
What is the concentration of holes and electrons in n-type Silicon at 300°K, if the conductivity is 30 S/cm?Assume at 300°K, ni= 1.5 x 1010/cm3, μn = 1300 cm2/V-s and μp= 500 cm2/V-sa)1.56 x 102 cm-3 and 1.44 x 1018 cm-3 respectivelyb)1.56 x 104 cm-3 and 1.44 x 1021 cm-3 respectivelyc)1.44 x 102 cm-3 and 1.56 x 1018 cm-3 respectivelyd)1.44 x 104 cm-3 and 1.56 x 1021 cm-3 respectivelyCorrect answer is option 'A'. Can you explain this answer? for Electrical Engineering (EE) 2024 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about What is the concentration of holes and electrons in n-type Silicon at 300°K, if the conductivity is 30 S/cm?Assume at 300°K, ni= 1.5 x 1010/cm3, μn = 1300 cm2/V-s and μp= 500 cm2/V-sa)1.56 x 102 cm-3 and 1.44 x 1018 cm-3 respectivelyb)1.56 x 104 cm-3 and 1.44 x 1021 cm-3 respectivelyc)1.44 x 102 cm-3 and 1.56 x 1018 cm-3 respectivelyd)1.44 x 104 cm-3 and 1.56 x 1021 cm-3 respectivelyCorrect answer is option 'A'. Can you explain this answer? covers all topics & solutions for Electrical Engineering (EE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for What is the concentration of holes and electrons in n-type Silicon at 300°K, if the conductivity is 30 S/cm?Assume at 300°K, ni= 1.5 x 1010/cm3, μn = 1300 cm2/V-s and μp= 500 cm2/V-sa)1.56 x 102 cm-3 and 1.44 x 1018 cm-3 respectivelyb)1.56 x 104 cm-3 and 1.44 x 1021 cm-3 respectivelyc)1.44 x 102 cm-3 and 1.56 x 1018 cm-3 respectivelyd)1.44 x 104 cm-3 and 1.56 x 1021 cm-3 respectivelyCorrect answer is option 'A'. Can you explain this answer?.
Solutions for What is the concentration of holes and electrons in n-type Silicon at 300°K, if the conductivity is 30 S/cm?Assume at 300°K, ni= 1.5 x 1010/cm3, μn = 1300 cm2/V-s and μp= 500 cm2/V-sa)1.56 x 102 cm-3 and 1.44 x 1018 cm-3 respectivelyb)1.56 x 104 cm-3 and 1.44 x 1021 cm-3 respectivelyc)1.44 x 102 cm-3 and 1.56 x 1018 cm-3 respectivelyd)1.44 x 104 cm-3 and 1.56 x 1021 cm-3 respectivelyCorrect answer is option 'A'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electrical Engineering (EE).
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What is the concentration of holes and electrons in n-type Silicon at 300°K, if the conductivity is 30 S/cm?Assume at 300°K, ni= 1.5 x 1010/cm3, μn = 1300 cm2/V-s and μp= 500 cm2/V-sa)1.56 x 102 cm-3 and 1.44 x 1018 cm-3 respectivelyb)1.56 x 104 cm-3 and 1.44 x 1021 cm-3 respectivelyc)1.44 x 102 cm-3 and 1.56 x 1018 cm-3 respectivelyd)1.44 x 104 cm-3 and 1.56 x 1021 cm-3 respectivelyCorrect answer is option 'A'. Can you explain this answer?, a detailed solution for What is the concentration of holes and electrons in n-type Silicon at 300°K, if the conductivity is 30 S/cm?Assume at 300°K, ni= 1.5 x 1010/cm3, μn = 1300 cm2/V-s and μp= 500 cm2/V-sa)1.56 x 102 cm-3 and 1.44 x 1018 cm-3 respectivelyb)1.56 x 104 cm-3 and 1.44 x 1021 cm-3 respectivelyc)1.44 x 102 cm-3 and 1.56 x 1018 cm-3 respectivelyd)1.44 x 104 cm-3 and 1.56 x 1021 cm-3 respectivelyCorrect answer is option 'A'. Can you explain this answer? has been provided alongside types of What is the concentration of holes and electrons in n-type Silicon at 300°K, if the conductivity is 30 S/cm?Assume at 300°K, ni= 1.5 x 1010/cm3, μn = 1300 cm2/V-s and μp= 500 cm2/V-sa)1.56 x 102 cm-3 and 1.44 x 1018 cm-3 respectivelyb)1.56 x 104 cm-3 and 1.44 x 1021 cm-3 respectivelyc)1.44 x 102 cm-3 and 1.56 x 1018 cm-3 respectivelyd)1.44 x 104 cm-3 and 1.56 x 1021 cm-3 respectivelyCorrect answer is option 'A'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice What is the concentration of holes and electrons in n-type Silicon at 300°K, if the conductivity is 30 S/cm?Assume at 300°K, ni= 1.5 x 1010/cm3, μn = 1300 cm2/V-s and μp= 500 cm2/V-sa)1.56 x 102 cm-3 and 1.44 x 1018 cm-3 respectivelyb)1.56 x 104 cm-3 and 1.44 x 1021 cm-3 respectivelyc)1.44 x 102 cm-3 and 1.56 x 1018 cm-3 respectivelyd)1.44 x 104 cm-3 and 1.56 x 1021 cm-3 respectivelyCorrect answer is option 'A'. Can you explain this answer? tests, examples and also practice Electrical Engineering (EE) tests.
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