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A n junction has a built-in potential of 0.6 V. The width of depletion layer at a reverse bias voltage of 1.4 V is 4µm. For a reverse bias of 17.4 V the depletion layer width will bea)1.333 μmb)8 μmc)6 μmd)12 μmCorrect answer is option 'D'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about A n junction has a built-in potential of 0.6 V. The width of depletion layer at a reverse bias voltage of 1.4 V is 4µm. For a reverse bias of 17.4 V the depletion layer width will bea)1.333 μmb)8 μmc)6 μmd)12 μmCorrect answer is option 'D'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A n junction has a built-in potential of 0.6 V. The width of depletion layer at a reverse bias voltage of 1.4 V is 4µm. For a reverse bias of 17.4 V the depletion layer width will bea)1.333 μmb)8 μmc)6 μmd)12 μmCorrect answer is option 'D'. Can you explain this answer?.

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