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Consider the following statements regarding the magnitude of barrier potential of a p- n junction. Which of them are true?
- a)It depends on difference between fermi levels on two sides of fermi level
- b)It depends on impurity concentration in p and n-type semiconductors
- c)It depends on forbidden energy-gap on two types of semiconductors
- d)It is independent of temperature
Correct answer is option 'A,B,C'. Can you explain this answer?
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Verified Answer
Consider the following statements regarding the magnitude of barrier p...
When a p-type semiconductor having holes as majority carrier is clamped with a ntype semiconductor having electron as majority carrier.
Some electrons from n-side goes to p-side and some holes goes to n-side, thus creates a potential barrier, which
(i) depends on temperature
(ii) depends on fermi level
(iii) forbidden energy gap Eg
(iv) majority carriers
The correct answers are: It depends on difference between fermi levels on two sides of fermi level, It depends on forbidden energy-gap on two types of semiconductors, It depends on impurity concentration in p and n-type semiconductors
Some electrons from n-side goes to p-side and some holes goes to n-side, thus creates a potential barrier, which
(i) depends on temperature
(ii) depends on fermi level
(iii) forbidden energy gap Eg
(iv) majority carriers
The correct answers are: It depends on difference between fermi levels on two sides of fermi level, It depends on forbidden energy-gap on two types of semiconductors, It depends on impurity concentration in p and n-type semiconductors
Most Upvoted Answer
Consider the following statements regarding the magnitude of barrier p...
When a p-type semiconductor having holes as majority carrier is clamped with a ntype semiconductor having electron as majority carrier.
Some electrons from n-side goes to p-side and some holes goes to n-side, thus creates a potential barrier, which
(i) depends on temperature
(ii) depends on fermi level
(iii) forbidden energy gap Eg
(iv) majority carriers
The correct answers are: It depends on difference between fermi levels on two sides of fermi level, It depends on forbidden energy-gap on two types of semiconductors, It depends on impurity concentration in p and n-type semiconductors
Some electrons from n-side goes to p-side and some holes goes to n-side, thus creates a potential barrier, which
(i) depends on temperature
(ii) depends on fermi level
(iii) forbidden energy gap Eg
(iv) majority carriers
The correct answers are: It depends on difference between fermi levels on two sides of fermi level, It depends on forbidden energy-gap on two types of semiconductors, It depends on impurity concentration in p and n-type semiconductors
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Consider the following statements regarding the magnitude of barrier potential of a p- n junction. Which of them are true?a)It depends on difference between fermi levels on two sides of fermi levelb)It depends on impurity concentration in p and n-type semiconductorsc)It depends on forbidden energy-gap on two types of semiconductorsd)It is independent of temperatureCorrect answer is option 'A,B,C'. Can you explain this answer?
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Consider the following statements regarding the magnitude of barrier potential of a p- n junction. Which of them are true?a)It depends on difference between fermi levels on two sides of fermi levelb)It depends on impurity concentration in p and n-type semiconductorsc)It depends on forbidden energy-gap on two types of semiconductorsd)It is independent of temperatureCorrect answer is option 'A,B,C'. Can you explain this answer? for Physics 2024 is part of Physics preparation. The Question and answers have been prepared according to the Physics exam syllabus. Information about Consider the following statements regarding the magnitude of barrier potential of a p- n junction. Which of them are true?a)It depends on difference between fermi levels on two sides of fermi levelb)It depends on impurity concentration in p and n-type semiconductorsc)It depends on forbidden energy-gap on two types of semiconductorsd)It is independent of temperatureCorrect answer is option 'A,B,C'. Can you explain this answer? covers all topics & solutions for Physics 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider the following statements regarding the magnitude of barrier potential of a p- n junction. Which of them are true?a)It depends on difference between fermi levels on two sides of fermi levelb)It depends on impurity concentration in p and n-type semiconductorsc)It depends on forbidden energy-gap on two types of semiconductorsd)It is independent of temperatureCorrect answer is option 'A,B,C'. Can you explain this answer?.
Consider the following statements regarding the magnitude of barrier potential of a p- n junction. Which of them are true?a)It depends on difference between fermi levels on two sides of fermi levelb)It depends on impurity concentration in p and n-type semiconductorsc)It depends on forbidden energy-gap on two types of semiconductorsd)It is independent of temperatureCorrect answer is option 'A,B,C'. Can you explain this answer? for Physics 2024 is part of Physics preparation. The Question and answers have been prepared according to the Physics exam syllabus. Information about Consider the following statements regarding the magnitude of barrier potential of a p- n junction. Which of them are true?a)It depends on difference between fermi levels on two sides of fermi levelb)It depends on impurity concentration in p and n-type semiconductorsc)It depends on forbidden energy-gap on two types of semiconductorsd)It is independent of temperatureCorrect answer is option 'A,B,C'. Can you explain this answer? covers all topics & solutions for Physics 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for Consider the following statements regarding the magnitude of barrier potential of a p- n junction. Which of them are true?a)It depends on difference between fermi levels on two sides of fermi levelb)It depends on impurity concentration in p and n-type semiconductorsc)It depends on forbidden energy-gap on two types of semiconductorsd)It is independent of temperatureCorrect answer is option 'A,B,C'. Can you explain this answer?.
Solutions for Consider the following statements regarding the magnitude of barrier potential of a p- n junction. Which of them are true?a)It depends on difference between fermi levels on two sides of fermi levelb)It depends on impurity concentration in p and n-type semiconductorsc)It depends on forbidden energy-gap on two types of semiconductorsd)It is independent of temperatureCorrect answer is option 'A,B,C'. Can you explain this answer? in English & in Hindi are available as part of our courses for Physics.
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Consider the following statements regarding the magnitude of barrier potential of a p- n junction. Which of them are true?a)It depends on difference between fermi levels on two sides of fermi levelb)It depends on impurity concentration in p and n-type semiconductorsc)It depends on forbidden energy-gap on two types of semiconductorsd)It is independent of temperatureCorrect answer is option 'A,B,C'. Can you explain this answer?, a detailed solution for Consider the following statements regarding the magnitude of barrier potential of a p- n junction. Which of them are true?a)It depends on difference between fermi levels on two sides of fermi levelb)It depends on impurity concentration in p and n-type semiconductorsc)It depends on forbidden energy-gap on two types of semiconductorsd)It is independent of temperatureCorrect answer is option 'A,B,C'. Can you explain this answer? has been provided alongside types of Consider the following statements regarding the magnitude of barrier potential of a p- n junction. Which of them are true?a)It depends on difference between fermi levels on two sides of fermi levelb)It depends on impurity concentration in p and n-type semiconductorsc)It depends on forbidden energy-gap on two types of semiconductorsd)It is independent of temperatureCorrect answer is option 'A,B,C'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice Consider the following statements regarding the magnitude of barrier potential of a p- n junction. Which of them are true?a)It depends on difference between fermi levels on two sides of fermi levelb)It depends on impurity concentration in p and n-type semiconductorsc)It depends on forbidden energy-gap on two types of semiconductorsd)It is independent of temperatureCorrect answer is option 'A,B,C'. Can you explain this answer? tests, examples and also practice Physics tests.
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