Explanation:
A Field Effect Transistor (FET) is a three-terminal semiconductor device which can be used as a voltage-controlled switch or as an amplifier. FETs are classified into two types, namely N-channel FET and P-channel FET, based on the channel type.

N-channel FETs:
In N-channel FET, the channel is made of N-type material and the source and drain are made of P-type material. The gate of the N-channel FET is made of metal and is insulated from the channel by a thin layer of oxide. When a positive voltage is applied to the gate, it creates an electric field which attracts electrons from the source to the channel. As the gate voltage increases, more electrons are attracted towards the channel, and the resistance of the channel decreases, allowing more current to flow from the source to the drain.

P-channel FETs:
In P-channel FET, the channel is made of P-type material and the source and drain are made of N-type material. The gate of the P-channel FET is also made of metal and is insulated from the channel by a thin layer of oxide. When a negative voltage is applied to the gate, it creates an electric field which attracts holes from the source to the channel. As the gate voltage increases, more holes are attracted towards the channel, and the resistance of the channel decreases, allowing more current to flow from the source to the drain.

Superiority of N-channel FETs over P-channel FETs:
N-channel FETs have several advantages over P-channel FETs, which are as follows:

1. Mobility of electrons is greater than that of holes:
The mobility of electrons is higher than that of holes in a semiconductor material. This means that electrons can move faster than holes in a semiconductor material. As a result, N-channel FETs have a higher switching speed compared to P-channel FETs.

2. Higher input impedance:
The input impedance of an N-channel FET is higher than that of a P-channel FET. This means that the N-channel FET is less sensitive to changes in the input voltage compared to the P-channel FET. Also, the N-channel FET requires less input voltage to turn on compared to the P-channel FET.

3. Consumes less power:
N-channel FETs consume less power compared to P-channel FETs. This is because the N-channel FET has a lower resistance and requires less voltage to turn on compared to the P-channel FET. As a result, N-channel FETs are more efficient and consume less power.

4. High switching speed:
As mentioned earlier, N-channel FETs have a higher switching speed compared to P-channel FETs. This is because electrons can move faster than holes in a semiconductor material. As a result, N-channel FETs are preferred over P-channel FETs in high-speed applications such as digital circuits.

Therefore, based on the above advantages, N-channel FETs are considered superior to P-channel FETs.