When P-type substance is connected with negative and n-type is connect...
When a positive voltage is applied to the N-type material and a negative voltage is applied to the P-type material, then a diode is connected in a reverse bias condition. In reserve bias the holes and electrons are attracted to the battery terminal and depletion region increased.
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When P-type substance is connected with negative and n-type is connect...
Reverse biased P-n junction diode
Reverse biasing a P-n junction diode refers to the arrangement where the positive terminal of the battery is connected to the N-type material and the negative terminal is connected to the P-type material. In this scenario, the diode is in a reverse biased state. Here's why:
- Barrier potential: When a P-n junction diode is reverse biased, the positive terminal of the battery repels the holes in the P-type material and attracts the electrons in the N-type material. This action increases the width of the depletion region and creates a high potential barrier at the junction.
- Reverse current: Due to the high potential barrier, very few charge carriers are able to cross the junction. As a result, the reverse current flowing through the diode is extremely low, typically in the nanoampere range.
- Conduction: In a reverse biased P-n junction diode, the majority charge carriers are pushed away from the junction, preventing current flow. The diode acts as an insulator and does not conduct electricity in this state.
- Breakdown: Excessive reverse biasing can lead to breakdown of the diode, where a sudden surge of current flows due to avalanche or Zener breakdown. This can permanently damage the diode.
In conclusion, when the P-type substance is connected to the negative terminal and the N-type substance is connected to the positive terminal of the battery, the P-n junction diode is in a reverse biased state.
When P-type substance is connected with negative and n-type is connect...
A