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For a transistor in common emitter configuration the reverse leakage current is 21uA whereas when the same transistor is connected in common base configuration it reduce to UA find out the value of adc and bdc of the transistor?
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For a transistor in common emitter configuration the reverse leakage c...
For a transistor in common emitter configuration the reverse leakage current is 21uA whereas when the same transistor is connected in common base configuration it reduce to UA find out the value of adc and bdc of the transistor?
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For a transistor in common emitter configuration the reverse leakage c...
Understanding Transistor Configurations
In this scenario, we are analyzing a transistor's performance in common emitter and common base configurations. The reverse leakage current changes from 21μA in common emitter to a smaller value in common base.
Key Parameters of Transistor
- Reverse Leakage Current (I_CBO): This is the current that flows from the collector to the base when the base-emitter junction is reverse-biased.
- Common Emitter Configuration: In this setup, the transistor exhibits significant current amplification, represented typically as β (beta).
- Common Base Configuration: Here, the current gain is denoted by α (alpha), which is the ratio of the collector current (I_C) to the emitter current (I_E).
Calculating Values
1. Common Emitter Leakage (I_CBO): Given as 21μA.
2. Common Base Leakage (I_CBO): Provided as UA (let's denote it as I_CBO').
- The relationship between α and β is expressed as:
α = β / (β + 1)
- Using the reverse leakage current values allows us to calculate the transistor's α and β.
Finding α and β
- Assuming UA: If UA is significantly less than 21μA, then we can derive:
β = I_C / I_B (where I_B is the base current).
- Determining Current Gain:
β = I_C / (I_E - I_C)
- For α:
α = I_C / (I_C + I_E)
Conclusion
To find specific values for α and β, we need the exact value of UA. However, with UA being less than 21μA, it indicates a decrease in current gain in the common base configuration. This reflects the efficiency of the transistor in different configurations, showcasing how the design impacts performance.
Understanding these parameters is crucial for optimizing transistor applications in circuits.
In this scenario, we are analyzing a transistor's performance in common emitter and common base configurations. The reverse leakage current changes from 21μA in common emitter to a smaller value in common base.
Key Parameters of Transistor
- Reverse Leakage Current (I_CBO): This is the current that flows from the collector to the base when the base-emitter junction is reverse-biased.
- Common Emitter Configuration: In this setup, the transistor exhibits significant current amplification, represented typically as β (beta).
- Common Base Configuration: Here, the current gain is denoted by α (alpha), which is the ratio of the collector current (I_C) to the emitter current (I_E).
Calculating Values
1. Common Emitter Leakage (I_CBO): Given as 21μA.
2. Common Base Leakage (I_CBO): Provided as UA (let's denote it as I_CBO').
- The relationship between α and β is expressed as:
α = β / (β + 1)
- Using the reverse leakage current values allows us to calculate the transistor's α and β.
Finding α and β
- Assuming UA: If UA is significantly less than 21μA, then we can derive:
β = I_C / I_B (where I_B is the base current).
- Determining Current Gain:
β = I_C / (I_E - I_C)
- For α:
α = I_C / (I_C + I_E)
Conclusion
To find specific values for α and β, we need the exact value of UA. However, with UA being less than 21μA, it indicates a decrease in current gain in the common base configuration. This reflects the efficiency of the transistor in different configurations, showcasing how the design impacts performance.
Understanding these parameters is crucial for optimizing transistor applications in circuits.
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For a transistor in common emitter configuration the reverse leakage current is 21uA whereas when the same transistor is connected in common base configuration it reduce to UA find out the value of adc and bdc of the transistor? for Electrical Engineering (EE) 2025 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about For a transistor in common emitter configuration the reverse leakage current is 21uA whereas when the same transistor is connected in common base configuration it reduce to UA find out the value of adc and bdc of the transistor? covers all topics & solutions for Electrical Engineering (EE) 2025 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for For a transistor in common emitter configuration the reverse leakage current is 21uA whereas when the same transistor is connected in common base configuration it reduce to UA find out the value of adc and bdc of the transistor?.
For a transistor in common emitter configuration the reverse leakage current is 21uA whereas when the same transistor is connected in common base configuration it reduce to UA find out the value of adc and bdc of the transistor? for Electrical Engineering (EE) 2025 is part of Electrical Engineering (EE) preparation. The Question and answers have been prepared according to the Electrical Engineering (EE) exam syllabus. Information about For a transistor in common emitter configuration the reverse leakage current is 21uA whereas when the same transistor is connected in common base configuration it reduce to UA find out the value of adc and bdc of the transistor? covers all topics & solutions for Electrical Engineering (EE) 2025 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for For a transistor in common emitter configuration the reverse leakage current is 21uA whereas when the same transistor is connected in common base configuration it reduce to UA find out the value of adc and bdc of the transistor?.
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