D. Channel Length Modulation is not associated with a p-n junction.

Explanation:

A p-n junction is formed when a p-type semiconductor and an n-type semiconductor are brought into contact. It is a fundamental building block in many electronic devices, such as diodes and transistors. Several phenomena are associated with a p-n junction, but channel length modulation is not one of them.

1. Junction Capacitance:
Junction capacitance is associated with a p-n junction. When a voltage is applied across a p-n junction, a depletion region is formed due to the migration of majority carriers. This depletion region acts as a dielectric between the p-type and n-type regions, creating a capacitance. This capacitance is known as the junction capacitance and is an important parameter in determining the high-frequency response of semiconductor devices.

2. Charge Storage Capacitance:
Charge storage capacitance is also associated with a p-n junction. When a p-n junction is forward-biased, majority carriers (holes in the p-region and electrons in the n-region) flow across the junction. These majority carriers are stored in the depletion region and contribute to the charge storage capacitance. The charge storage capacitance affects the switching speed and dynamic behavior of semiconductor devices.

3. Depletion Capacitance:
Depletion capacitance is another term used to describe the capacitance associated with the depletion region of a p-n junction. As mentioned earlier, when a voltage is applied to a p-n junction, a depletion region is formed. This depletion region acts as a capacitor, and the capacitance associated with it is known as the depletion capacitance. The depletion capacitance depends on the doping concentration and the width of the depletion region.

4. Channel Length Modulation:
Channel length modulation is not directly associated with a p-n junction. It is a phenomenon observed in MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) devices, which consist of a p-n junction between the source and drain regions. Channel length modulation refers to the change in effective channel length as a result of a variation in the drain-source voltage. It affects the output characteristics and transconductance of the MOSFET but is not directly related to the p-n junction itself.