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Which of the following is true in construction of a transistor?
- a)the collector dissipates lesser power
- b)the emitter supplies minority carriers
- c)the collector is made physically larger than the emitter region
- d)the collector collects minority charge carriers
Correct answer is option 'C'. Can you explain this answer?
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Which of the following is true in construction of a transistor?a)the c...
In most of the transistors, the collector is made larger than emitter region. This is due to the fact that collector has to dissipate much greater power. The collector and emitter cannot be interchanged.
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Which of the following is true in construction of a transistor?a)the c...
Collector is made physically larger than the emitter region:
In the construction of a transistor, the collector region is physically larger than the emitter region. This is done for several reasons:
- Power dissipation: The collector region is designed to dissipate more power compared to the emitter. This is because the collector-base junction is reverse biased, allowing it to withstand higher voltages and power levels. By making the collector larger, it can handle more power without overheating.
- Collection of minority charge carriers: The main function of the collector is to collect minority charge carriers (electrons in an NPN transistor or holes in a PNP transistor) that are injected from the emitter. By making the collector region larger, it increases the chances of collecting these carriers, improving the overall efficiency of the transistor.
- Reduction of recombination: By having a larger collector region, the chances of minority carriers recombining within the transistor structure are reduced. This helps in maintaining a high level of amplification and improving the performance of the transistor.
Overall, making the collector physically larger than the emitter region is a crucial design aspect in transistor construction that helps in improving power dissipation, collection of minority charge carriers, and reducing recombination within the device.
In the construction of a transistor, the collector region is physically larger than the emitter region. This is done for several reasons:
- Power dissipation: The collector region is designed to dissipate more power compared to the emitter. This is because the collector-base junction is reverse biased, allowing it to withstand higher voltages and power levels. By making the collector larger, it can handle more power without overheating.
- Collection of minority charge carriers: The main function of the collector is to collect minority charge carriers (electrons in an NPN transistor or holes in a PNP transistor) that are injected from the emitter. By making the collector region larger, it increases the chances of collecting these carriers, improving the overall efficiency of the transistor.
- Reduction of recombination: By having a larger collector region, the chances of minority carriers recombining within the transistor structure are reduced. This helps in maintaining a high level of amplification and improving the performance of the transistor.
Overall, making the collector physically larger than the emitter region is a crucial design aspect in transistor construction that helps in improving power dissipation, collection of minority charge carriers, and reducing recombination within the device.
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Which of the following is true in construction of a transistor?a)the collector dissipates lesser powerb)the emitter supplies minority carriersc)the collector is made physically larger than the emitter regiond)the collector collects minority charge carriersCorrect answer is option 'C'. Can you explain this answer?
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