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A BJT with β = 50 has a base to collector leakage current ICBO of 2.5 μA. If the transistor is connected in CE configuration, the collector current for IB = 0 is 
  • a)
    0.05 μA
  • b)
    0.1275 mA
  • c)
    0.157 mA
  • d)
    0.516 mA
Correct answer is option 'B'. Can you explain this answer?
Most Upvoted Answer
A BJT with β = 50 has a base to collector leakage current ICBO of...
Concept:
ICEO is the reverse leakage current in the common-emitter configuration of BJT when the base is open.
ICBO is the reverse leakage current in the common-base configuration of BJT when the emitter is open.
Also, ICEO > ICBO
And they are related by the relation:
ICEO = (1 + β) ICBO
Total collector current is given by:
IC = βIB + ICBO(β + 1)
Application:
The total collector current for the given configuration will be:
IC = βIB + ICBO(β + 1)   ---(1)
Given: IB = 0 A, β = 50, and ICBO = 2.5 μA.
Substituting these values in Equation (1), we get:
IC = (50)(0) + (2.5 μ) (50 + 1)
IC = 2.5 x 10-6 x 51 A
IC = 0.1275 mA
Free Test
Community Answer
A BJT with β = 50 has a base to collector leakage current ICBO of...
Concept:
ICEO is the reverse leakage current in the common-emitter configuration of BJT when the base is open.
ICBO is the reverse leakage current in the common-base configuration of BJT when the emitter is open.
Also, ICEO > ICBO
And they are related by the relation:
ICEO = (1 + β) ICBO
Total collector current is given by:
IC = βIB + ICBO(β + 1)
Application:
The total collector current for the given configuration will be:
IC = βIB + ICBO(β + 1)   ---(1)
Given: IB = 0 A, β = 50, and ICBO = 2.5 μA.
Substituting these values in Equation (1), we get:
IC = (50)(0) + (2.5 μ) (50 + 1)
IC = 2.5 x 10-6 x 51 A
IC = 0.1275 mA
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A BJT with β = 50 has a base to collector leakage current ICBO of 2.5 μA. If the transistor is connected in CE configuration, the collector current for IB = 0 isa)0.05μAb)0.1275mAc)0.157mAd)0.516 mACorrect answer is option 'B'. Can you explain this answer?
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A BJT with β = 50 has a base to collector leakage current ICBO of 2.5 μA. If the transistor is connected in CE configuration, the collector current for IB = 0 isa)0.05μAb)0.1275mAc)0.157mAd)0.516 mACorrect answer is option 'B'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about A BJT with β = 50 has a base to collector leakage current ICBO of 2.5 μA. If the transistor is connected in CE configuration, the collector current for IB = 0 isa)0.05μAb)0.1275mAc)0.157mAd)0.516 mACorrect answer is option 'B'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A BJT with β = 50 has a base to collector leakage current ICBO of 2.5 μA. If the transistor is connected in CE configuration, the collector current for IB = 0 isa)0.05μAb)0.1275mAc)0.157mAd)0.516 mACorrect answer is option 'B'. Can you explain this answer?.
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