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When a relatively small d.c. voltage is applied across a thin slice of Gallium Arsenide with thickness of order of few tenths of a micrometer and the voltage gradient across the slice is in excess of about 3300 V/cm, then the negative resistance will manifest itself. Which of the following devices operate based on the above phenomenon?
  • a)
    Tunnel diode
  • b)
    Gunn diode
  • c)
    Schottky diode
  • d)
    Point Contact diode
Correct answer is option 'B'. Can you explain this answer?
Most Upvoted Answer
When a relatively small d.c. voltage is applied across a thin slice o...
The above-mentioned phenomenon occurs in Gunn diode and it is called the GUNN EFFECT. Gunn Effect is exhibited by semiconductor materials like gallium arsenide, indium phosphide, cadmium telluride and indium arsenide.
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When a relatively small d.c. voltage is applied across a thin slice of Gallium Arsenide with thickness of order of few tenths of a micrometer and the voltage gradient across the slice is in excess of about 3300 V/cm, then the negative resistance will manifest itself. Which of the following devices operate based on the above phenomenon?a)Tunnel diodeb)Gunn diodec)Schottky dioded)Point Contact diodeCorrect answer is option 'B'. Can you explain this answer?
Question Description
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