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A junction diode is fabricated in which the p and n regions are doped equally with 5 × 1016 atoms/cm3. Assume ni= 1.5 × 1010/cm3. If the cross-sectional area of the junction is 20 μm2, the magnitude of the charge stored on either side of the junction while no external bias being applied would be – (Assume ∈s= 1.04 x 10-14 F/cm, V0 (barrier potential) = 0.78V )a)1.61 x 10-19 Cb)1.13 x 10-15 Cc)1.13 x 10-19 Cd)1.61 x 10-15 CCorrect answer is option 'D'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about A junction diode is fabricated in which the p and n regions are doped equally with 5 × 1016 atoms/cm3. Assume ni= 1.5 × 1010/cm3. If the cross-sectional area of the junction is 20 μm2, the magnitude of the charge stored on either side of the junction while no external bias being applied would be – (Assume ∈s= 1.04 x 10-14 F/cm, V0 (barrier potential) = 0.78V )a)1.61 x 10-19 Cb)1.13 x 10-15 Cc)1.13 x 10-19 Cd)1.61 x 10-15 CCorrect answer is option 'D'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A junction diode is fabricated in which the p and n regions are doped equally with 5 × 1016 atoms/cm3. Assume ni= 1.5 × 1010/cm3. If the cross-sectional area of the junction is 20 μm2, the magnitude of the charge stored on either side of the junction while no external bias being applied would be – (Assume ∈s= 1.04 x 10-14 F/cm, V0 (barrier potential) = 0.78V )a)1.61 x 10-19 Cb)1.13 x 10-15 Cc)1.13 x 10-19 Cd)1.61 x 10-15 CCorrect answer is option 'D'. Can you explain this answer?.

Solutions for A junction diode is fabricated in which the p and n regions are doped equally with 5 × 1016 atoms/cm3. Assume ni= 1.5 × 1010/cm3. If the cross-sectional area of the junction is 20 μm2, the magnitude of the charge stored on either side of the junction while no external bias being applied would be – (Assume ∈s= 1.04 x 10-14 F/cm, V0 (barrier potential) = 0.78V )a)1.61 x 10-19 Cb)1.13 x 10-15 Cc)1.13 x 10-19 Cd)1.61 x 10-15 CCorrect answer is option 'D'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electronics and Communication Engineering (ECE). Download more important topics, notes, lectures and mock test series for Electronics and Communication Engineering (ECE) Exam by signing up for free.

Here you can find the meaning of A junction diode is fabricated in which the p and n regions are doped equally with 5 × 1016 atoms/cm3. Assume ni= 1.5 × 1010/cm3. If the cross-sectional area of the junction is 20 μm2, the magnitude of the charge stored on either side of the junction while no external bias being applied would be – (Assume ∈s= 1.04 x 10-14 F/cm, V0 (barrier potential) = 0.78V )a)1.61 x 10-19 Cb)1.13 x 10-15 Cc)1.13 x 10-19 Cd)1.61 x 10-15 CCorrect answer is option 'D'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of A junction diode is fabricated in which the p and n regions are doped equally with 5 × 1016 atoms/cm3. Assume ni= 1.5 × 1010/cm3. If the cross-sectional area of the junction is 20 μm2, the magnitude of the charge stored on either side of the junction while no external bias being applied would be – (Assume ∈s= 1.04 x 10-14 F/cm, V0 (barrier potential) = 0.78V )a)1.61 x 10-19 Cb)1.13 x 10-15 Cc)1.13 x 10-19 Cd)1.61 x 10-15 CCorrect answer is option 'D'. Can you explain this answer?, a detailed solution for A junction diode is fabricated in which the p and n regions are doped equally with 5 × 1016 atoms/cm3. Assume ni= 1.5 × 1010/cm3. If the cross-sectional area of the junction is 20 μm2, the magnitude of the charge stored on either side of the junction while no external bias being applied would be – (Assume ∈s= 1.04 x 10-14 F/cm, V0 (barrier potential) = 0.78V )a)1.61 x 10-19 Cb)1.13 x 10-15 Cc)1.13 x 10-19 Cd)1.61 x 10-15 CCorrect answer is option 'D'. Can you explain this answer? has been provided alongside types of A junction diode is fabricated in which the p and n regions are doped equally with 5 × 1016 atoms/cm3. Assume ni= 1.5 × 1010/cm3. If the cross-sectional area of the junction is 20 μm2, the magnitude of the charge stored on either side of the junction while no external bias being applied would be – (Assume ∈s= 1.04 x 10-14 F/cm, V0 (barrier potential) = 0.78V )a)1.61 x 10-19 Cb)1.13 x 10-15 Cc)1.13 x 10-19 Cd)1.61 x 10-15 CCorrect answer is option 'D'. Can you explain this answer? theory, EduRev gives you an ample number of questions to practice A junction diode is fabricated in which the p and n regions are doped equally with 5 × 1016 atoms/cm3. Assume ni= 1.5 × 1010/cm3. If the cross-sectional area of the junction is 20 μm2, the magnitude of the charge stored on either side of the junction while no external bias being applied would be – (Assume ∈s= 1.04 x 10-14 F/cm, V0 (barrier potential) = 0.78V )a)1.61 x 10-19 Cb)1.13 x 10-15 Cc)1.13 x 10-19 Cd)1.61 x 10-15 CCorrect answer is option 'D'. Can you explain this answer? tests, examples and also practice Electronics and Communication Engineering (ECE) tests.