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Thermal runaway in a transistor biased in active region is due to
- a)heating of the transistor
- b)changes in b which increases with temperature
- c)base emitter voltage VBE which decreases with rise in temperature
- d)change in reverse collector saturation current due to rise in temperature
Correct answer is option 'D'. Can you explain this answer?
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Thermal runaway in a transistor biased in active region is due toa)hea...
Biasing is the process of providing DC voltage which helps in the functioning of the circuit. A transistor is based in order to make the emitter base junction forward biased and collector base junction reverse biased, so that it maintains in active region, to work as an amplifier.
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Thermal runaway in a transistor biased in active region is due toa)hea...
Thermal Runaway in a Transistor Biased in Active Region
Thermal runaway is a phenomenon that occurs in a transistor when it is biased in the active region. It is a self-destructive process that can cause the transistor to overheat and eventually fail. The correct answer to why thermal runaway occurs in such a transistor is option D, which is explained below.
Change in Reverse Collector Saturation Current
The reverse collector saturation current is the current that flows through the collector of the transistor when it is reverse-biased. This current increases with temperature due to the increase in the number of minority carriers in the collector region. As the temperature rises, the number of minority carriers increases, leading to an increase in the reverse collector saturation current.
The increase in the reverse collector saturation current leads to an increase in the collector-emitter voltage and a decrease in the collector current. This, in turn, leads to an increase in the power dissipated by the transistor, which further increases its temperature. This positive feedback loop can cause the transistor to overheat and eventually fail.
Other Factors
While the change in reverse collector saturation current is the primary reason for thermal runaway in a transistor biased in the active region, there are other factors that can contribute to this phenomenon. These include:
- Heating of the transistor due to power dissipation
- Changes in the base-emitter voltage VBE, which can decrease with a rise in temperature
- Changes in the beta (b) of the transistor, which can increase with temperature
Conclusion
In conclusion, thermal runaway in a transistor biased in the active region is primarily due to the increase in the reverse collector saturation current with temperature. This current leads to a positive feedback loop that causes the transistor to overheat and eventually fail. Other factors, such as heating, changes in VBE, and changes in beta, can also contribute to this phenomenon.
Thermal runaway is a phenomenon that occurs in a transistor when it is biased in the active region. It is a self-destructive process that can cause the transistor to overheat and eventually fail. The correct answer to why thermal runaway occurs in such a transistor is option D, which is explained below.
Change in Reverse Collector Saturation Current
The reverse collector saturation current is the current that flows through the collector of the transistor when it is reverse-biased. This current increases with temperature due to the increase in the number of minority carriers in the collector region. As the temperature rises, the number of minority carriers increases, leading to an increase in the reverse collector saturation current.
The increase in the reverse collector saturation current leads to an increase in the collector-emitter voltage and a decrease in the collector current. This, in turn, leads to an increase in the power dissipated by the transistor, which further increases its temperature. This positive feedback loop can cause the transistor to overheat and eventually fail.
Other Factors
While the change in reverse collector saturation current is the primary reason for thermal runaway in a transistor biased in the active region, there are other factors that can contribute to this phenomenon. These include:
- Heating of the transistor due to power dissipation
- Changes in the base-emitter voltage VBE, which can decrease with a rise in temperature
- Changes in the beta (b) of the transistor, which can increase with temperature
Conclusion
In conclusion, thermal runaway in a transistor biased in the active region is primarily due to the increase in the reverse collector saturation current with temperature. This current leads to a positive feedback loop that causes the transistor to overheat and eventually fail. Other factors, such as heating, changes in VBE, and changes in beta, can also contribute to this phenomenon.
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Thermal runaway in a transistor biased in active region is due toa)heating of the transistorb)changes in b which increases with temperaturec)base emitter voltage VBE which decreases with rise in temperatured)change in reverse collector saturation current due to rise in temperatureCorrect answer is option 'D'. Can you explain this answer?
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