Electrical Engineering (EE) Exam > Electrical Engineering (EE) Questions > In an N-P-N transistor, the leakage current i...
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In an N-P-N transistor, the leakage current is due to
- a)flow of minority carriers from collector to emitter
- b)flow of holes form base to emitter
- c)flow of electrons from collector to base
- d)flow of holes from collector to base
Correct answer is option 'D'. Can you explain this answer?
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In an N-P-N transistor, the leakage current is due toa)flow of minorit...
In most transistor, more than 95% of the emitter injected electrons flow to the collector, less than 5% fall into base holes and flow out the external base lead. But the collector current is less than emitter current. Usually, the reverse leakage current is very small compared to the total collector current.
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In an N-P-N transistor, the leakage current is due toa)flow of minorit...
Leakage current in N-P-N transistor
Introduction:
In an N-P-N transistor, the leakage current is the small current that flows through the transistor even when it is in the off state. The leakage current is due to the flow of minority carriers through the transistor.
Explanation:
The N-P-N transistor is made up of three layers of semiconductor material - the emitter, the base, and the collector. The base is very thin compared to the emitter and collector layers, and it is lightly doped with impurities. When a small current is applied to the base, it causes a large current to flow from the emitter to the collector.
In an N-P-N transistor, the leakage current is due to the flow of holes from the collector to the base. The collector is heavily doped with impurities, which creates a large number of free electrons. These free electrons can combine with the holes in the base layer, creating a small current flow from the collector to the base. This current flow is called the leakage current.
Conclusion:
Although the leakage current is small, it can have a significant impact on the performance of the transistor. It can cause the transistor to heat up, which can lead to reduced performance and even failure. Therefore, it is important to minimize the leakage current in N-P-N transistors. This can be done by using high-quality materials, optimizing the doping levels, and minimizing the size of the base layer.
Introduction:
In an N-P-N transistor, the leakage current is the small current that flows through the transistor even when it is in the off state. The leakage current is due to the flow of minority carriers through the transistor.
Explanation:
The N-P-N transistor is made up of three layers of semiconductor material - the emitter, the base, and the collector. The base is very thin compared to the emitter and collector layers, and it is lightly doped with impurities. When a small current is applied to the base, it causes a large current to flow from the emitter to the collector.
In an N-P-N transistor, the leakage current is due to the flow of holes from the collector to the base. The collector is heavily doped with impurities, which creates a large number of free electrons. These free electrons can combine with the holes in the base layer, creating a small current flow from the collector to the base. This current flow is called the leakage current.
Conclusion:
Although the leakage current is small, it can have a significant impact on the performance of the transistor. It can cause the transistor to heat up, which can lead to reduced performance and even failure. Therefore, it is important to minimize the leakage current in N-P-N transistors. This can be done by using high-quality materials, optimizing the doping levels, and minimizing the size of the base layer.
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In an N-P-N transistor, the leakage current is due toa)flow of minority carriers from collector to emitterb)flow of holes form base to emitterc)flow of electrons from collector to based)flow of holes from collector to baseCorrect answer is option 'D'. Can you explain this answer?
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