A p-type semiconductor material is doped with ____________ impurities whereas a n-type semiconductor material is doped with __________ impuritiesa)acceptor, donorb)acceptor, acceptorc)donor, donord)donor, acceptorCorrect answer is option 'A'. Can you explain this answer?

Question

Answer

Introduction:
Semiconductors are materials that have electrical conductivity between conductors and insulators. The conductivity of a semiconductor can be modified by doping it with impurities. Doping is the process of intentionally introducing impurities into a semiconductor to change its electrical properties. There are two types of impurities used for doping: acceptor impurities and donor impurities.

P-Type Semiconductor:
A p-type semiconductor is formed by doping a pure semiconductor material with acceptor impurities. Acceptor impurities have fewer valence electrons than the atoms in the pure semiconductor material. As a result, when an acceptor impurity atom replaces a semiconductor atom, it creates a 'hole' in the crystal lattice structure. These holes act as charge carriers in the p-type semiconductor. The most commonly used acceptor impurities are boron (B), aluminum (Al), and gallium (Ga).

N-Type Semiconductor:
An n-type semiconductor is formed by doping a pure semiconductor material with donor impurities. Donor impurities have more valence electrons than the atoms in the pure semiconductor material. When a donor impurity atom replaces a semiconductor atom, it introduces an extra electron into the crystal lattice structure. These extra electrons act as charge carriers in the n-type semiconductor. The most commonly used donor impurities are phosphorus (P), arsenic (As), and antimony (Sb).

Summary:
In summary, a p-type semiconductor material is doped with acceptor impurities because acceptor impurities have fewer valence electrons and create holes in the crystal lattice structure, which act as charge carriers. On the other hand, an n-type semiconductor material is doped with donor impurities because donor impurities have more valence electrons and introduce extra electrons into the crystal lattice structure, which act as charge carriers.

Answer

In a PN junction the potential barrier is due to the charges on either side of the junction, these charges are

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