Electronics and Communication Engineering (ECE) Exam > Electronics and Communication Engineering (ECE) Questions > The correct statement regarding depletion and...
Start Learning for Free
The correct statement regarding depletion and diffusion capacitance is
i) Depletion capacitance is dominant in reverse-bias voltage
ii) Diffusion capacitance is dominant in reverse-bias voltage
iii) The diffusion capacitance is due to a stored charge of minority electrons and minority holes near the depletion region
iv) Depletion capacitance is directly proportional to the width of the depletion region
- a)i, iii
- b)iii, iv
- c)ii, iii, iv
- d)All the above
Correct answer is option 'A'. Can you explain this answer?
| FREE This question is part of | Download PDF Attempt this Test |
Verified Answer
The correct statement regarding depletion and diffusion capacitance is...
Diffusion capacitance is due to transfer of minority carries during forward bias. The minority carries diffuse from one end of junction to other, causing variation of charge with applied voltage. This leads to capacitance, it is present only in forward bias and is significantly higher than depletion capacitance in forward bias.
Depletion capacitance is due to storage of charges in reverse bias junction, which acts like parallel plate capacitance with forward voltage, the depletion width decreases increasing depletion capacitance. It is less than diffusion capacitance in forward bias mode.
Most Upvoted Answer
The correct statement regarding depletion and diffusion capacitance is...
Depletion capacitance and diffusion capacitance are two important characteristics of semiconductor devices, especially diodes and transistors. They represent the capacitance associated with the depletion region and the stored charge in the minority carriers, respectively.
Depletion Capacitance:
- Depletion capacitance is dominant in reverse-bias voltage.
- It is due to the presence of the depletion region in a semiconductor device.
- The depletion region is formed when a p-n junction is formed, and it contains immobile ions that create an electric field across the junction.
- The depletion capacitance arises due to the variation of the width of the depletion region with a reverse-bias voltage.
- As the reverse-bias voltage increases, the width of the depletion region increases, resulting in a higher depletion capacitance.
- Therefore, depletion capacitance is directly proportional to the width of the depletion region.
Diffusion Capacitance:
- Diffusion capacitance is not dominant in reverse-bias voltage.
- It is due to the stored charge of minority electrons and minority holes near the depletion region.
- When a p-n junction is forward-biased, minority carriers (electrons in the p-region and holes in the n-region) diffuse across the junction.
- The diffusion capacitance arises due to the storage of these minority carriers in the depletion region.
- It is primarily associated with the dynamic behavior of the device, such as the charging and discharging of the stored charge during transitions.
- Diffusion capacitance is inversely proportional to the width of the depletion region.
Conclusion:
- From the above explanations, it is clear that the correct statements are i) Depletion capacitance is dominant in reverse-bias voltage and iii) The diffusion capacitance is due to a stored charge of minority electrons and minority holes near the depletion region.
- Option 'A' is the correct answer as it includes only these two statements.
Depletion Capacitance:
- Depletion capacitance is dominant in reverse-bias voltage.
- It is due to the presence of the depletion region in a semiconductor device.
- The depletion region is formed when a p-n junction is formed, and it contains immobile ions that create an electric field across the junction.
- The depletion capacitance arises due to the variation of the width of the depletion region with a reverse-bias voltage.
- As the reverse-bias voltage increases, the width of the depletion region increases, resulting in a higher depletion capacitance.
- Therefore, depletion capacitance is directly proportional to the width of the depletion region.
Diffusion Capacitance:
- Diffusion capacitance is not dominant in reverse-bias voltage.
- It is due to the stored charge of minority electrons and minority holes near the depletion region.
- When a p-n junction is forward-biased, minority carriers (electrons in the p-region and holes in the n-region) diffuse across the junction.
- The diffusion capacitance arises due to the storage of these minority carriers in the depletion region.
- It is primarily associated with the dynamic behavior of the device, such as the charging and discharging of the stored charge during transitions.
- Diffusion capacitance is inversely proportional to the width of the depletion region.
Conclusion:
- From the above explanations, it is clear that the correct statements are i) Depletion capacitance is dominant in reverse-bias voltage and iii) The diffusion capacitance is due to a stored charge of minority electrons and minority holes near the depletion region.
- Option 'A' is the correct answer as it includes only these two statements.
Free Test
FREE
| Start Free Test |
Community Answer
The correct statement regarding depletion and diffusion capacitance is...
Know that capacitors store electric charge in the form of electric field. This charge storage is done by using two electrically conducting plates (placed close to each other) separated by an insulating material called dielectric.
The conducting plates or electrodes of the capacitor are good conductors of electricity. Therefore, they easily allow electric current through them. On the other hand, dielectric material or medium is poor conductor of electricity. Therefore, it does not allow electric current through it. However, it efficiently allows electric field.
We know that capacitors store electric charge in the form of electric field. The capacitors store electric charge by using two electrically conducting plates
When voltage is applied to the capacitor, charge carriers starts flowing through the conducting wire. When these charge carriers reach the electrodes of the capacitor, they experience a strong opposition from the dielectric or insulating material. As a result, a large number of charge carriers are trapped at the electrodes of the capacitor. These charge carriers cannot move between the plates. However, they exerts electric field between the plates. The charge carriers which are trapped near the dielectric material will stores
The conducting plates or electrodes of the capacitor are good conductors of electricity. Therefore, they easily allow electric current through them. On the other hand, dielectric material or medium is poor conductor of electricity. Therefore, it does not allow electric current through it. However, it efficiently allows electric field.
We know that capacitors store electric charge in the form of electric field. The capacitors store electric charge by using two electrically conducting plates
When voltage is applied to the capacitor, charge carriers starts flowing through the conducting wire. When these charge carriers reach the electrodes of the capacitor, they experience a strong opposition from the dielectric or insulating material. As a result, a large number of charge carriers are trapped at the electrodes of the capacitor. These charge carriers cannot move between the plates. However, they exerts electric field between the plates. The charge carriers which are trapped near the dielectric material will stores
Attention Electronics and Communication Engineering (ECE) Students!
To make sure you are not studying endlessly, EduRev has designed Electronics and Communication Engineering (ECE) study material, with Structured Courses, Videos, & Test Series. Plus get personalized analysis, doubt solving and improvement plans to achieve a great score in Electronics and Communication Engineering (ECE).
|
Explore Courses for Electronics and Communication Engineering (ECE) exam
|
|
Similar Electronics and Communication Engineering (ECE) Doubts
Top Courses for Electronics and Communication Engineering (ECE)View all
The correct statement regarding depletion and diffusion capacitance isi) Depletion capacitance is dominant in reverse-bias voltageii) Diffusion capacitance is dominant in reverse-bias voltageiii) The diffusion capacitance is due to a stored charge of minority electrons and minority holes near the depletion regioniv) Depletion capacitance is directly proportional to the width of the depletion regiona)i, iiib)iii, ivc)ii, iii, ivd)All the aboveCorrect answer is option 'A'. Can you explain this answer?
Question Description
The correct statement regarding depletion and diffusion capacitance isi) Depletion capacitance is dominant in reverse-bias voltageii) Diffusion capacitance is dominant in reverse-bias voltageiii) The diffusion capacitance is due to a stored charge of minority electrons and minority holes near the depletion regioniv) Depletion capacitance is directly proportional to the width of the depletion regiona)i, iiib)iii, ivc)ii, iii, ivd)All the aboveCorrect answer is option 'A'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about The correct statement regarding depletion and diffusion capacitance isi) Depletion capacitance is dominant in reverse-bias voltageii) Diffusion capacitance is dominant in reverse-bias voltageiii) The diffusion capacitance is due to a stored charge of minority electrons and minority holes near the depletion regioniv) Depletion capacitance is directly proportional to the width of the depletion regiona)i, iiib)iii, ivc)ii, iii, ivd)All the aboveCorrect answer is option 'A'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for The correct statement regarding depletion and diffusion capacitance isi) Depletion capacitance is dominant in reverse-bias voltageii) Diffusion capacitance is dominant in reverse-bias voltageiii) The diffusion capacitance is due to a stored charge of minority electrons and minority holes near the depletion regioniv) Depletion capacitance is directly proportional to the width of the depletion regiona)i, iiib)iii, ivc)ii, iii, ivd)All the aboveCorrect answer is option 'A'. Can you explain this answer?.
The correct statement regarding depletion and diffusion capacitance isi) Depletion capacitance is dominant in reverse-bias voltageii) Diffusion capacitance is dominant in reverse-bias voltageiii) The diffusion capacitance is due to a stored charge of minority electrons and minority holes near the depletion regioniv) Depletion capacitance is directly proportional to the width of the depletion regiona)i, iiib)iii, ivc)ii, iii, ivd)All the aboveCorrect answer is option 'A'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about The correct statement regarding depletion and diffusion capacitance isi) Depletion capacitance is dominant in reverse-bias voltageii) Diffusion capacitance is dominant in reverse-bias voltageiii) The diffusion capacitance is due to a stored charge of minority electrons and minority holes near the depletion regioniv) Depletion capacitance is directly proportional to the width of the depletion regiona)i, iiib)iii, ivc)ii, iii, ivd)All the aboveCorrect answer is option 'A'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for The correct statement regarding depletion and diffusion capacitance isi) Depletion capacitance is dominant in reverse-bias voltageii) Diffusion capacitance is dominant in reverse-bias voltageiii) The diffusion capacitance is due to a stored charge of minority electrons and minority holes near the depletion regioniv) Depletion capacitance is directly proportional to the width of the depletion regiona)i, iiib)iii, ivc)ii, iii, ivd)All the aboveCorrect answer is option 'A'. Can you explain this answer?.
Solutions for The correct statement regarding depletion and diffusion capacitance isi) Depletion capacitance is dominant in reverse-bias voltageii) Diffusion capacitance is dominant in reverse-bias voltageiii) The diffusion capacitance is due to a stored charge of minority electrons and minority holes near the depletion regioniv) Depletion capacitance is directly proportional to the width of the depletion regiona)i, iiib)iii, ivc)ii, iii, ivd)All the aboveCorrect answer is option 'A'. Can you explain this answer? in English & in Hindi are available as part of our courses for Electronics and Communication Engineering (ECE).
Download more important topics, notes, lectures and mock test series for Electronics and Communication Engineering (ECE) Exam by signing up for free.
Here you can find the meaning of The correct statement regarding depletion and diffusion capacitance isi) Depletion capacitance is dominant in reverse-bias voltageii) Diffusion capacitance is dominant in reverse-bias voltageiii) The diffusion capacitance is due to a stored charge of minority electrons and minority holes near the depletion regioniv) Depletion capacitance is directly proportional to the width of the depletion regiona)i, iiib)iii, ivc)ii, iii, ivd)All the aboveCorrect answer is option 'A'. Can you explain this answer? defined & explained in the simplest way possible. Besides giving the explanation of
The correct statement regarding depletion and diffusion capacitance isi) Depletion capacitance is dominant in reverse-bias voltageii) Diffusion capacitance is dominant in reverse-bias voltageiii) The diffusion capacitance is due to a stored charge of minority electrons and minority holes near the depletion regioniv) Depletion capacitance is directly proportional to the width of the depletion regiona)i, iiib)iii, ivc)ii, iii, ivd)All the aboveCorrect answer is option 'A'. Can you explain this answer?, a detailed solution for The correct statement regarding depletion and diffusion capacitance isi) Depletion capacitance is dominant in reverse-bias voltageii) Diffusion capacitance is dominant in reverse-bias voltageiii) The diffusion capacitance is due to a stored charge of minority electrons and minority holes near the depletion regioniv) Depletion capacitance is directly proportional to the width of the depletion regiona)i, iiib)iii, ivc)ii, iii, ivd)All the aboveCorrect answer is option 'A'. Can you explain this answer? has been provided alongside types of The correct statement regarding depletion and diffusion capacitance isi) Depletion capacitance is dominant in reverse-bias voltageii) Diffusion capacitance is dominant in reverse-bias voltageiii) The diffusion capacitance is due to a stored charge of minority electrons and minority holes near the depletion regioniv) Depletion capacitance is directly proportional to the width of the depletion regiona)i, iiib)iii, ivc)ii, iii, ivd)All the aboveCorrect answer is option 'A'. Can you explain this answer? theory, EduRev gives you an
ample number of questions to practice The correct statement regarding depletion and diffusion capacitance isi) Depletion capacitance is dominant in reverse-bias voltageii) Diffusion capacitance is dominant in reverse-bias voltageiii) The diffusion capacitance is due to a stored charge of minority electrons and minority holes near the depletion regioniv) Depletion capacitance is directly proportional to the width of the depletion regiona)i, iiib)iii, ivc)ii, iii, ivd)All the aboveCorrect answer is option 'A'. Can you explain this answer? tests, examples and also practice Electronics and Communication Engineering (ECE) tests.
|
|
Explore Courses for Electronics and Communication Engineering (ECE) exam
|
|
Suggested Free Tests
Signup for Free!
Signup to see your scores go up within 7 days! Learn & Practice with 1000+ FREE Notes, Videos & Tests.
x
![]()
For Your Perfect Score in Electronics and Communication Engineering (ECE)
The Best you need at One Place
|
© EduRev
|
Education Revolution
|
Follow Us
|
Signup to see your scores
go up within 7 days!
Access 1000+ FREE Docs, Videos and Tests
Takes less than 10 seconds to signup