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A silicon sample is dope with unknown concentration of Arsenic, such that the fermi level (EF) is 0.407 eV relative to intrinsic level (Ei). The conductivity of the silicon sample after doping is______(Ω – cm)-1.The mobility of electrons μn= 3800 cm2/v-s and holes μp= 1800 cm2/v-s. Take kT = 0.0259 eV at 300°K and intrinsic concentration ni= 1.5 × 1010cm-3Correct answer is between '59,62'. Can you explain this answer? for Electronics and Communication Engineering (ECE) 2024 is part of Electronics and Communication Engineering (ECE) preparation. The Question and answers have been prepared according to the Electronics and Communication Engineering (ECE) exam syllabus. Information about A silicon sample is dope with unknown concentration of Arsenic, such that the fermi level (EF) is 0.407 eV relative to intrinsic level (Ei). The conductivity of the silicon sample after doping is______(Ω – cm)-1.The mobility of electrons μn= 3800 cm2/v-s and holes μp= 1800 cm2/v-s. Take kT = 0.0259 eV at 300°K and intrinsic concentration ni= 1.5 × 1010cm-3Correct answer is between '59,62'. Can you explain this answer? covers all topics & solutions for Electronics and Communication Engineering (ECE) 2024 Exam. Find important definitions, questions, meanings, examples, exercises and tests below for A silicon sample is dope with unknown concentration of Arsenic, such that the fermi level (EF) is 0.407 eV relative to intrinsic level (Ei). The conductivity of the silicon sample after doping is______(Ω – cm)-1.The mobility of electrons μn= 3800 cm2/v-s and holes μp= 1800 cm2/v-s. Take kT = 0.0259 eV at 300°K and intrinsic concentration ni= 1.5 × 1010cm-3Correct answer is between '59,62'. Can you explain this answer?.

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